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1EDN6550BXTSA1

Infineon 1EDN6550BXTSA1

高压侧和低压侧24.5V ~ 20V

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1EDN6550BXTSA1
DRIVER IC
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¥8.93

价格更新:一个月前

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产品详情

Overview

The 2N6549 is Darlington Transistors NPN 40V 2A, that includes 2N6549 Series, they are designed to operate with a Bulk Packaging, Part Aliases is shown on datasheet note for use in a BK, that offers Mounting Style features such as Through Hole, Package Case is designed to work in TO-202, as well as the Single Configuration, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 65 C, the device is offered in 40 V Collector Emitter Voltage VCEO Max, the device has a NPN of Transistor Polarity, and Collector Base Voltage VCBO is 50 V, and the Emitter Base Voltage VEBO is 12 V, and Maximum DC Collector Current is 2 A, and the DC Collector Base Gain hfe Min is 15000 at 200 mA at 5 V 10000 at 500 mA at 5 V 3 at 1 A at 5 V, and Maximum Collector Cut off Current is 0.1 uA.

The 2N6546 is Bipolar Transistors - BJT NPN Transistor manufactured by Microsemi. The 2N6546 is available in TO-3 Package, is part of the Transistors - Bipolar (BJT) - RF, , and with support for Bipolar Transistors - BJT NPN Transistor, Bipolar (BJT) Transistor.

Features

EiceDRIVER™ Series
Tape & Reel (TR) Package
Single Channel Type
2 Number of Drivers
4.5V ~ 20V Voltage - Supply
5.2A, 9.4A Current - Peak Output (Source, Sink)
400 V High Side Voltage - Max (Bootstrap)
1ns, 1ns Rise / Fall Time (Typ)
Surface Mount Mounting Type
产品属性
全选
型号系列: EiceDRIVER™
包装: 卷带(TR)
部件状态: 在售
可编程: 未验证
驱动配置: 高压侧和低压侧
通道类型: 单路
驱动器数: 2
栅极类型: N - 沟道 MOSFET,SiC MOSFET
电源电压: 4.5V ~ 20V
电流 - 峰值输出(灌入,拉出): 5.2A,9.4A
输入类型: 反相,非反相
最大高压侧电压(自启动): 400 V
上升/下降时间(典型值): 1ns,1ns
工作温度: -40°C ~ 150°C(TJ)
安装类型: 表面贴装型
封装/外壳: SOT-23-6
供应商器件封装: PG-SOT23-6
Infineon Technologies

Infineon Technologies

Infineon Technologies是一家全球领先的半导体公司,成立于1999年,总部位于德国慕尼黑。公司专注于提供高性能的功率半导体、传感器和微控制器解决方案,服务于汽车、工业、电源管理和物联网等领域。

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