Infineon 1EDF5673FXUMA1

磁耦合11500VDC

Overview

The single-channel galvanically isolated gate driver IC 1EDF5673F is a perfect fit for enhancement mode (e-mode) gallium nitride (GaN) HEMTs with non-isolated gate (diode input characteristic) and low threshold voltage, such as CoolGaN™. It ensures robust and highly efficient high voltage GaN switch operation whilst concurrently minimizing R&D efforts and shortening time-to-market.

Features

EiceDriver™ Series
Tape & Reel (TR) Package
Magnetic Coupling Technology
1 Number of Channels
1500VDC Voltage - Isolation
150V/ns Common Mode Transient Immunity (Min)
44ns, 44ns Propagation Delay tpLH / tpHL (Max)
18ns (Typ) Pulse Width Distortion (Max)
6.5ns, 4.5ns Rise / Fall Time (Typ)
4A, 8A Current - Output High, Low
3.13V ~ 3.47V Voltage - Output Supply
Surface Mount Mounting Type
CQC, CSA, UL, VDE Approval Agency