ST STL40DN3LLH5

MOSFET（金属氧化物）2 N-通道（双）30V40A18 毫欧 @ 5.5A，10V1.5V @ 250µA

Overview

This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET H5 technology. The device has been optimized to achieve very low on-state resistance, contributing to a FoM that is among the best in its class.

Features

STripFET™ V Series
Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
30V Drain to Source Voltage (Vdss)
40A Current - Continuous Drain (Id) @ 25°C
18mOhm @ 5.5A, 10V Rds On (Max) @ Id, Vgs
1.5V @ 250µA Vgs(th) (Max) @ Id
4.5nC @ 4.5V Gate Charge (Qg) (Max) @ Vgs
475pF @ 25V Input Capacitance (Ciss) (Max) @ Vds
60W Power - Max
Surface Mount Mounting Type
PowerFlat™ (5x6) Supplier Device Package

Applications

? AEC-Q101 qualified

? Low on-resistance

? High avalanche ruggedness

? Low gate drive power loss

? Wettable flank package

STL40DN3LLH5           Applications

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