ST STL40C30H3LL

MOSFET（金属氧化物）逻辑电平门N 和 P 沟道30V40A，30A21 毫欧 @ 4A，10V1V @ 250µA（最小）

Overview

The STL3NM60N is MOSFET N-Ch 600V 1.5Ohm 2.2A MDMesh II MOS, that includes N-channel MDmesh Series, they are designed to operate with a Reel Packaging, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as PowerFlat-8, Technology is designed to work in Si, as well as the 1 Channel Number of Channels, the device can also be used as 1 N-Channel Transistor Type. In addition, the Pd Power Dissipation is 2 W, the device is offered in 20 ns Fall Time, the device has a 6.2 ns of Rise Time, and Id Continuous Drain Current is 2.2 A, and the Vds Drain Source Breakdown Voltage is 600 V, and Vgs th Gate Source Threshold Voltage is 4 V, and the Rds On Drain Source Resistance is 1.8 Ohms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 20.8 ns, and Typical Turn On Delay Time is 8.6 ns, and the Qg Gate Charge is 9.5 nC, and Channel Mode is Enhancement.

STL3NK60Z with circuit diagram manufactured by ST. The STL3NK60Z is available in QFN Package, is part of the IC Chips.

Features

STripFET™ VI Series
Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
30V Drain to Source Voltage (Vdss)
40A, 30A Current - Continuous Drain (Id) @ 25°C
21mOhm @ 4A, 10V Rds On (Max) @ Id, Vgs
1V @ 250µA (Min) Vgs(th) (Max) @ Id
4.6nC @ 4.5V Gate Charge (Qg) (Max) @ Vgs
475pF @ 24V Input Capacitance (Ciss) (Max) @ Vds
60W Power - Max
Surface Mount Mounting Type
PowerFlat™ (5x6) Supplier Device Package

Applications

? RDS(on) * Qg industry benchmark

? Extremely low on-resistance RDS(on)

? High avalanche ruggedness

? Low gate drive power losses

STL40C30H3LL                    Applications

? Switching applications