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STGW60H65F

ST STGW60H65F

650 V120 A750µJ(开),1.05mJ(关)-55°C ~ 150°C(TJ)TO-247-3

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STGW60H65F
IGBT 650V 120A 360W TO247
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产品详情

Overview

The STGW60H65DFB is IGBT 650V 80A 375W TO-247, that includes 600-650V IGBTs Series, they are designed to operate with a Tube Packaging, Unit Weight is shown on datasheet note for use in a 1.340411 oz, that offers Mounting Style features such as Through Hole, Package Case is designed to work in TO-247-3, as well as the Standard Input Type, the device can also be used as Through Hole Mounting Type. In addition, the Supplier Device Package is TO-247, the device is offered in Single Configuration, the device has a 375W of Power Max, and Reverse Recovery Time trr is 60ns, and the Current Collector Ic Max is 80A, and Voltage Collector Emitter Breakdown Max is 650V, and the IGBT Type is Trench Field Stop, and Current Collector Pulsed Icm is 240A, and the Vce on Max Vge Ic is 2V @ 15V, 60A, and Switching Energy is 1.09mJ (on), 626μJ (off), and the Gate Charge is 306nC, and Td on off 25°C is 51ns/160ns, and the Test Condition is 400V, 60A, 5 Ohm, 15V, and Pd Power Dissipation is 375 W, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and the Collector Emitter Voltage VCEO Max is 650 V, and Collector Emitter Saturation Voltage is 1.6 V, and the Continuous Collector Current at 25 C is 80 A, and Gate Emitter Leakage Current is 250 nA, and the Maximum Gate Emitter Voltage is 20 V, and Continuous Collector Current Ic Max is 60 A.

The STGW60H65DF is IGBT 650V 120A 360W TO247, that includes 2.1 V Collector Emitter Saturation Voltage, they are designed to operate with a 650 V Collector Emitter Voltage VCEO Max, Continuous Collector Current at 25 C is shown on datasheet note for use in a 120 A, that offers Current Collector Ic Max features such as 120A, Current Collector Pulsed Icm is designed to work in 240A, as well as the 206nC Gate Charge, the device can also be used as Trench Field Stop IGBT Type. In addition, the Input Type is Standard, the device is offered in 20 V Maximum Gate Emitter Voltage, the device has a Through Hole of Mounting Type, and Mounting Style is Through Hole, and the Package Case is TO-247-3, and Packaging is Tube, and the Pd Power Dissipation is 360 W, and Power Max is 360W, and the Reverse Recovery Time trr is 62ns, and Series is 600-650V IGBTs, and the Supplier Device Package is TO-247, and Switching Energy is 1.5mJ (on), 1.1mJ (off), and the Td on off 25°C is 67ns/165ns, and Test Condition is 400V, 60A, 10 Ohm, 15V, and the Unit Weight is 0.229281 oz, and Vce on Max Vge Ic is 1.9V @ 15V, 60A, and the Voltage Collector Emitter Breakdown Max is 650V.

Features

Tube Package
  • High-speed switching

  • Tight parameter distribution

  • Low thermal resistance

  • 6 μs short-circuit withstand time

  • Lead-free package

  • Safe paralleling


Through Hole Mounting Type

Applications

  • Induction Heating

  • Large Solenoids

  • Tesla Coils

  • Microwave Oven

  • Converters or Inverter circuits


产品属性
全选
包装: 管件
部件状态: 停产
IGBT 类型: 沟槽型场截止
最大集电极-发射极击穿电压: 650 V
集电极电流 (Ic)(最大值): 120 A
电流 - 集电极脉冲 (Icm): 240 A
栅极-发射极电压和集电极电流时的最大集电极-发射极导通电压: 1.9V @ 15V,60A
最大功率: 360 W
开关能量: 750µJ(开),1.05mJ(关)
输入类型: 标准
栅极电荷: 217 nC
25°C 时的开/关延迟时间: 65ns/180ns
测试条件: 400V,60A,10 欧姆,15V
工作温度: -55°C ~ 150°C(TJ)
安装类型: 通孔
封装/外壳: TO-247-3
供应商器件封装: TO-247-3
STMicroelectronics

STMicroelectronics

STMicroelectronics(ST)是一家领先的半导体公司,成立于1987年,总部位于瑞士日内瓦。公司提供多种半导体解决方案,应用于汽车、工业、个人电子和通信等领域。ST的产品组合包括微控制器、传感器、模拟IC和电源管理芯片等。

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