ON NTZD3158PT1G

MOSFET（金属氧化物）2 个 P 沟道（双）20V430mA900 毫欧 @ 430mA，4.5V1V @ 250µA

Overview

The NTZD3156CT1G is MOSFET N/P-CH 20V SOT-563, that includes Tape & Reel (TR) Packaging, they are designed to operate with a SOT-563, SOT-666 Package Case, it has an Operating Temperature range of -55°C ~ 150°C (TJ), that offers Mounting Type features such as Surface Mount, Supplier Device Package is designed to work in SOT-563, as well as the N and P-Channel FET Type, the device can also be used as 250mW Power Max. In addition, the Drain to Source Voltage Vdss is 20V, the device is offered in 72pF @ 16V Input Capacitance Ciss Vds, the device has a Logic Level Gate of FET Feature, and Current Continuous Drain Id 25°C is 540mA, 430mA, and the Rds On Max Id Vgs is 550 mOhm @ 540mA, 4.5V, and Vgs th Max Id is 1V @ 250μA, and the Gate Charge Qg Vgs is 2.5nC @ 4.5V.

The NTZD3156CT5G is MOSFET N/P-CH 20V SOT-563, that includes 540mA, 430mA Current Continuous Drain Id 25°C, they are designed to operate with a 20V Drain to Source Voltage Vdss, FET Feature is shown on datasheet note for use in a Logic Level Gate, that offers FET Type features such as N and P-Channel, Gate Charge Qg Vgs is designed to work in 2.5nC @ 4.5V, as well as the 72pF @ 16V Input Capacitance Ciss Vds, the device can also be used as Surface Mount Mounting Type, it has an Operating Temperature range of -55°C ~ 150°C (TJ), the device is offered in SOT-563, SOT-666 Package Case, the device has a Tape & Reel (TR) of Packaging, and Power Max is 250mW, and the Rds On Max Id Vgs is 550 mOhm @ 540mA, 4.5V, and Supplier Device Package is SOT-563, and the Vgs th Max Id is 1V @ 250μA.

Features

Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
20V Drain to Source Voltage (Vdss)
430mA Current - Continuous Drain (Id) @ 25°C
900mOhm @ 430mA, 4.5V Rds On (Max) @ Id, Vgs
1V @ 250µA Vgs(th) (Max) @ Id
2.5nC @ 4.5V Gate Charge (Qg) (Max) @ Vgs
175pF @ 16V Input Capacitance (Ciss) (Max) @ Vds
250mW Power - Max
Surface Mount Mounting Type