ON NTZD3155CT1G

MOSFET（金属氧化物）逻辑电平门N 和 P 沟道20V540mA，430mA550 毫欧 @ 540mA，4.5V1V @ 250µA

Overview

The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channel’s into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semi’s trench technology.

Features

? Leading Trench Technology for Low RDS(on) Performance

? High Efficiency System Performance

? Low Threshold Voltage

? ESD Protected Gate

? Small Footprint 1.6 x 1.6 mm

? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS

Compliant

Applications

NTZD3155CT1G               Applications

? DC?DC Conversion Circuits

? Load/Power Switching with Level Shift

? Single or Dual Cell Li?Ion Battery Operated Systems

? High Speed Circuits

? Cell Phones, MP3s, Digital Cameras, and PDAs