ON NTUD3169CZT5G

MOSFET（金属氧化物）逻辑电平门N 和 P 沟道20V220mA，200mA1.5 欧姆 @ 100mA，4.5V1V @ 250µA

Overview

The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channel’s into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semi’s trench technology.

Features

? Complementary MOSFET Device

? Offers a Low RDS(on) Solution in the Ultra Small 1.0x1.0 mm

Package

? 1.5 V Gate Voltage Rating

? Ultra Thin Profile (< 0.5 mm) Allows It to Fit Easily into Extremely

Thin Environments such as Portable Electronics.

? This is a Pb?Free Device

Applications

? Load Switch with Level Shift

? Optimized for Power Management in Ultra Portable Equipment