ON NTLJD4150PTBG

MOSFET（金属氧化物）逻辑电平门2 个 P 沟道（双）30V1.8A135 毫欧 @ 4A，10V2V @ 250µA

Overview

The NTLJD3183CZTAG is MOSFET N/P-CH 20V 6WDFN, that includes Tape & Reel (TR) Packaging, they are designed to operate with a 6-WDFN Exposed Pad Package Case, it has an Operating Temperature range of -55°C ~ 150°C (TJ), that offers Mounting Type features such as Surface Mount, Supplier Device Package is designed to work in 6-WDFN (2x2), as well as the N and P-Channel FET Type, the device can also be used as 710mW Power Max. In addition, the Drain to Source Voltage Vdss is 20V, the device is offered in 355pF @ 10V Input Capacitance Ciss Vds, the device has a Logic Level Gate of FET Feature, and Current Continuous Drain Id 25°C is 2.6A, 2.2A, and the Rds On Max Id Vgs is 68 mOhm @ 2A, 4.5V, and Vgs th Max Id is 1V @ 250μA, and the Gate Charge Qg Vgs is 7nC @ 4.5V.

The NTLJD4116NT1G is MOSFET 2N-CH 30V 2.5A 6-WDFN, that includes 2.5A Current Continuous Drain Id 25°C, they are designed to operate with a 30V Drain to Source Voltage Vdss, FET Feature is shown on datasheet note for use in a Logic Level Gate, that offers FET Type features such as 2 N-Channel (Dual), Gate Charge Qg Vgs is designed to work in 6.5nC @ 4.5V, as well as the 427pF @ 15V Input Capacitance Ciss Vds, the device can also be used as Surface Mount Mounting Type, it has an Operating Temperature range of -55°C ~ 150°C (TJ), the device is offered in 6-WDFN Exposed Pad Package Case, the device has a Tape & Reel (TR) of Packaging, and Power Max is 710mW, and the Rds On Max Id Vgs is 70 mOhm @ 2A, 4.5V, and Supplier Device Package is 6-WDFN (2x2), and the Vgs th Max Id is 1V @ 250μA.

Features

Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
30V Drain to Source Voltage (Vdss)
1.8A Current - Continuous Drain (Id) @ 25°C
135mOhm @ 4A, 10V Rds On (Max) @ Id, Vgs
2V @ 250µA Vgs(th) (Max) @ Id
4.5nC @ 4.5V Gate Charge (Qg) (Max) @ Vgs
300pF @ 15V Input Capacitance (Ciss) (Max) @ Vds
700mW Power - Max
Surface Mount Mounting Type