ON NTLJD3119CTAG

MOSFET（金属氧化物）逻辑电平门N 和 P 沟道20V2.6A，2.3A65 毫欧 @ 3.8A，4.5V1V @ 250µA

Features

? Complementary N?Channel and P?Channel MOSFET

? WDFN Package with Exposed Drain Pad for Excellent Thermal

Conduction

? Footprint Same as SC?88 Package

? Leading Edge Trench Technology for Low On Resistance

? 1.8 V Gate Threshold Voltage

? Low Profile (< 0.8 mm) for Easy Fit in Thin Environments

? This is a Pb?Free Device

Applications

? Synchronous DC?DC Conversion Circuits

? Load/Power Management of Portable Devices like PDA?ˉs, Cellular

Phones and Hard Drives

? Color Display and Camera Flash Regulators