ON NTLJD3115PT1G

MOSFET（金属氧化物）逻辑电平门2 个 P 沟道（双）20V2.3A100 毫欧 @ 2A，4.5V1V @ 250µA

Features

? Exposed Drain Pad for Excellent Thermal Conduction is Provided by the WDFN Package

? Footprint of 2x2 mm similar to SC 88

? 2x2 mm Package with Lowest RDS(on)

? Operation at Low Voltage Gate Drive Logic Level: 1.8 V RDS(on) Rating

? Low Profile for Easy Fit in Thin Environments ( 0.8 mm)

? Configuration of Bidirectional Current Flow with Common Source

? This device is lead-free.

Applications

? Application-Specific Optimization for Battery and Load Management

? Portable Resources

? Circuits for Li-Ion battery charging and protection

? High Side Switch Load