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NTLJD3183CZTBG

ON NTLJD3183CZTBG

MOSFET(金属氧化物)逻辑电平门N 和 P 沟道20V2.6A,2.2A68 毫欧 @ 2A,4.5V1V @ 250µA

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NTLJD3183CZTBG
MOSFET N/P-CH 20V 6WDFN
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¥1.31

价格更新:一个月前

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产品详情

Overview

The NTLJD3181PZTAG is MOSFET 2P-CH 20V 2.2A 6WDFN, that includes Tape & Reel (TR) Packaging, they are designed to operate with a 6-WDFN Exposed Pad Package Case, it has an Operating Temperature range of -55°C ~ 150°C (TJ), that offers Mounting Type features such as Surface Mount, Supplier Device Package is designed to work in 6-WDFN (2x2), as well as the 2 P-Channel (Dual) FET Type, the device can also be used as 710mW Power Max. In addition, the Drain to Source Voltage Vdss is 20V, the device is offered in 450pF @ 10V Input Capacitance Ciss Vds, the device has a Logic Level Gate of FET Feature, and Current Continuous Drain Id 25°C is 2.2A, and the Rds On Max Id Vgs is 100 mOhm @ 2A, 4.5V, and Vgs th Max Id is 1V @ 250μA, and the Gate Charge Qg Vgs is 7.8nC @ 4.5V.

The NTLJD3183CZTAG is MOSFET N/P-CH 20V 6WDFN, that includes 2.6A, 2.2A Current Continuous Drain Id 25°C, they are designed to operate with a 20V Drain to Source Voltage Vdss, FET Feature is shown on datasheet note for use in a Logic Level Gate, that offers FET Type features such as N and P-Channel, Gate Charge Qg Vgs is designed to work in 7nC @ 4.5V, as well as the 355pF @ 10V Input Capacitance Ciss Vds, the device can also be used as Surface Mount Mounting Type, it has an Operating Temperature range of -55°C ~ 150°C (TJ), the device is offered in 6-WDFN Exposed Pad Package Case, the device has a Tape & Reel (TR) of Packaging, and Power Max is 710mW, and the Rds On Max Id Vgs is 68 mOhm @ 2A, 4.5V, and Supplier Device Package is 6-WDFN (2x2), and the Vgs th Max Id is 1V @ 250μA.

Features

Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
20V Drain to Source Voltage (Vdss)
2.6A, 2.2A Current - Continuous Drain (Id) @ 25°C
68mOhm @ 2A, 4.5V Rds On (Max) @ Id, Vgs
1V @ 250µA Vgs(th) (Max) @ Id
7nC @ 4.5V Gate Charge (Qg) (Max) @ Vgs
355pF @ 10V Input Capacitance (Ciss) (Max) @ Vds
710mW Power - Max
Surface Mount Mounting Type
产品属性
全选
包装: 卷带(TR)
部件状态: 停产
技术: MOSFET(金属氧化物)
FET 功能: 逻辑电平门
配置: N 和 P 沟道
漏源电压(Vdss): 20V
25°C 时电流 - 连续漏极 (Id): 2.6A,2.2A
漏极电流和栅极至源极电压下的最大导通电阻: 68 毫欧 @ 2A,4.5V
漏极电流下的最大栅极阈值电压: 1V @ 250µA
最大栅极电荷 (Qg) @ Vgs: 7nC @ 4.5V
Vds 时的最大输入电容 (Ciss): 355pF @ 10V
最大功率: 710mW
工作温度: -55°C ~ 150°C(TJ)
安装类型: 表面贴装型
封装/外壳: 6-WDFN 裸露焊盘
供应商器件封装: 6-WDFN(2x2)
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