ON NTLJD3183CZTAG

MOSFET（金属氧化物）逻辑电平门N 和 P 沟道20V2.6A，2.2A68 毫欧 @ 2A，4.5V1V @ 250µA

Overview

The NTLJD3119CTBG is MOSFET N/P-CH 20V 6WDFN, that includes μCool? Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as 6-WDFN Exposed Pad, Technology is designed to work in Si, it has an Operating Temperature range of -55°C ~ 150°C (TJ), the device can also be used as Surface Mount Mounting Type. In addition, the Number of Channels is 2 Channel, the device is offered in 6-WDFN (2x2) Supplier Device Package, the device has a N-Channel P-Channel of Configuration, and FET Type is N and P-Channel, and the Power Max is 710mW, and Transistor Type is 1 N-Channel 1 P-Channel, and the Drain to Source Voltage Vdss is 20V, and Input Capacitance Ciss Vds is 271pF @ 10V, and the FET Feature is Logic Level Gate, and Current Continuous Drain Id 25°C is 2.6A, 2.3A, and the Rds On Max Id Vgs is 65 mOhm @ 3.8A, 4.5V, and Vgs th Max Id is 1V @ 250μA, and the Gate Charge Qg Vgs is 3.7nC @ 4.5V, and Pd Power Dissipation is 710 mW, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 4.7 ns 13.2 ns, and Rise Time is 4.7 ns 13.2 ns, and the Vgs Gate Source Voltage is 8 V, and Id Continuous Drain Current is 3.8 A, and the Vds Drain Source Breakdown Voltage is 21 V - 20 V, and Rds On Drain Source Resistance is 100 mOhms, and the Transistor Polarity is N-Channel P-Channel, and Typical Turn Off Delay Time is 11.1 ns 13.7 ns, and the Typical Turn On Delay Time is 3.8 ns 5.2 ns, and Forward Transconductance Min is 4.2 S 3.1 S, and the Channel Mode is Enhancement.

The NTLJD3181PZTBG is MOSFET 2P-CH 20V 2.2A 6WDFN, that includes 2.2A Current Continuous Drain Id 25°C, they are designed to operate with a 20V Drain to Source Voltage Vdss, FET Feature is shown on datasheet note for use in a Logic Level Gate, that offers FET Type features such as 2 P-Channel (Dual), Gate Charge Qg Vgs is designed to work in 7.8nC @ 4.5V, as well as the 450pF @ 10V Input Capacitance Ciss Vds, the device can also be used as Surface Mount Mounting Type, it has an Operating Temperature range of -55°C ~ 150°C (TJ), the device is offered in 6-WDFN Exposed Pad Package Case, the device has a Tape & Reel (TR) of Packaging, and Power Max is 710mW, and the Rds On Max Id Vgs is 100 mOhm @ 2A, 4.5V, and Supplier Device Package is 6-WDFN (2x2), and the Vgs th Max Id is 1V @ 250μA.

Features

Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
20V Drain to Source Voltage (Vdss)
2.6A, 2.2A Current - Continuous Drain (Id) @ 25°C
68mOhm @ 2A, 4.5V Rds On (Max) @ Id, Vgs
1V @ 250µA Vgs(th) (Max) @ Id
7nC @ 4.5V Gate Charge (Qg) (Max) @ Vgs
355pF @ 10V Input Capacitance (Ciss) (Max) @ Vds
710mW Power - Max
Surface Mount Mounting Type