ON NTJD4158CT1G

MOSFET（金属氧化物）逻辑电平门N 和 P 沟道30V，20V250mA，880mA1.5 欧姆 @ 10mA，4.5V1.5V @ 100µA

Overview

The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channel’s into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semi’s trench technology.

Features

? Leading 20 V Trench for Low RDS(on) Performance

? ESD Protected Gate

? SC?88 Package for Small Footprint (2 x 2 mm)

? NV Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC?Q101 Qualified and

PPAP Capable

? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS

Compliant

Applications

? DC?DC Conversion

? Load/Power Management

? Load Switch

? Cell Phones, MP3s, Digital Cameras, PDAs