ON NTJD3158CT2G

MOSFET（金属氧化物）逻辑电平门N 和 P 沟道20V630mA，820mA375 毫欧 @ 630mA，4.5V1.5V @ 250µA

Overview

The NTJD2152PT4G is MOSFET 2P-CH 8V 0.775A SOT-363, that includes Tape & Reel (TR) Packaging, they are designed to operate with a 6-TSSOP, SC-88, SOT-363 Package Case, it has an Operating Temperature range of -55°C ~ 150°C (TJ), that offers Mounting Type features such as Surface Mount, Supplier Device Package is designed to work in SC-88/SC70-6/SOT-363, as well as the 2 P-Channel (Dual) FET Type, the device can also be used as 270mW Power Max. In addition, the Drain to Source Voltage Vdss is 8V, the device is offered in 225pF @ 8V Input Capacitance Ciss Vds, the device has a Logic Level Gate of FET Feature, and Current Continuous Drain Id 25°C is 775mA, and the Rds On Max Id Vgs is 300 mOhm @ 570mA, 4.5V, and Vgs th Max Id is 1V @ 250μA, and the Gate Charge Qg Vgs is 4nC @ 4.5V.

The NTJD3158CT1G is Trans MOSFET N/P-CH 20V 0.63A/0.82A 6-Pin SC-88 T/R manufactured by ON. The NTJD3158CT1G is available in SOT-363 Package, is part of the IC Chips, , and with support for Trans MOSFET N/P-CH 20V 0.63A/0.82A 6-Pin SC-88 T/R.

Features

Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
20V Drain to Source Voltage (Vdss)
630mA, 820mA Current - Continuous Drain (Id) @ 25°C
375mOhm @ 630mA, 4.5V Rds On (Max) @ Id, Vgs
1.5V @ 250µA Vgs(th) (Max) @ Id
3nC @ 4.5V Gate Charge (Qg) (Max) @ Vgs
46pF @ 20V Input Capacitance (Ciss) (Max) @ Vds
270mW Power - Max
Surface Mount Mounting Type