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NTJD2152PT4G

ON NTJD2152PT4G

MOSFET(金属氧化物)逻辑电平门2 个 P 沟道(双)8V775mA300 毫欧 @ 570mA,4.5V1V @ 250µA

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NTJD2152PT4G
MOSFET 2P-CH 8V 0.775A SOT-363
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产品详情

Overview

The NTJD2152PT2 is MOSFET 2P-CH 8V 0.775A SOT-363, that includes Tape & Reel (TR) Packaging, they are designed to operate with a 6-TSSOP, SC-88, SOT-363 Package Case, it has an Operating Temperature range of -55°C ~ 150°C (TJ), that offers Mounting Type features such as Surface Mount, Supplier Device Package is designed to work in SC-88/SC70-6/SOT-363, as well as the 2 P-Channel (Dual) FET Type, the device can also be used as 270mW Power Max. In addition, the Drain to Source Voltage Vdss is 8V, the device is offered in 225pF @ 8V Input Capacitance Ciss Vds, the device has a Logic Level Gate of FET Feature, and Current Continuous Drain Id 25°C is 775mA, and the Rds On Max Id Vgs is 300 mOhm @ 570mA, 4.5V, and Vgs th Max Id is 1V @ 250μA, and the Gate Charge Qg Vgs is 4nC @ 4.5V.

The NTJD2152PT4 is MOSFET 2P-CH 8V 0.775A SOT-363, that includes 775mA Current Continuous Drain Id 25°C, they are designed to operate with a 8V Drain to Source Voltage Vdss, FET Feature is shown on datasheet note for use in a Logic Level Gate, that offers FET Type features such as 2 P-Channel (Dual), Gate Charge Qg Vgs is designed to work in 4nC @ 4.5V, as well as the 225pF @ 8V Input Capacitance Ciss Vds, the device can also be used as Surface Mount Mounting Type, it has an Operating Temperature range of -55°C ~ 150°C (TJ), the device is offered in 6-TSSOP, SC-88, SOT-363 Package Case, the device has a Tape & Reel (TR) of Packaging, and Power Max is 270mW, and the Rds On Max Id Vgs is 300 mOhm @ 570mA, 4.5V, and Supplier Device Package is SC-88/SC70-6/SOT-363, and the Vgs th Max Id is 1V @ 250μA.

Features

Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
8V Drain to Source Voltage (Vdss)
775mA Current - Continuous Drain (Id) @ 25°C
300mOhm @ 570mA, 4.5V Rds On (Max) @ Id, Vgs
1V @ 250µA Vgs(th) (Max) @ Id
4nC @ 4.5V Gate Charge (Qg) (Max) @ Vgs
225pF @ 8V Input Capacitance (Ciss) (Max) @ Vds
270mW Power - Max
Surface Mount Mounting Type
产品属性
全选
包装: 卷带(TR)
部件状态: 停产
技术: MOSFET(金属氧化物)
FET 功能: 逻辑电平门
配置: 2 个 P 沟道(双)
漏源电压(Vdss): 8V
25°C 时电流 - 连续漏极 (Id): 775mA
漏极电流和栅极至源极电压下的最大导通电阻: 300 毫欧 @ 570mA,4.5V
漏极电流下的最大栅极阈值电压: 1V @ 250µA
最大栅极电荷 (Qg) @ Vgs: 4nC @ 4.5V
Vds 时的最大输入电容 (Ciss): 225pF @ 8V
最大功率: 270mW
工作温度: -55°C ~ 150°C(TJ)
安装类型: 表面贴装型
封装/外壳: 6-TSSOP,SC-88,SOT-363
供应商器件封装: SC-88/SC70-6/SOT-363
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