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NTHD4401PT3

ON NTHD4401PT3

MOSFET(金属氧化物)逻辑电平门2 个 P 沟道(双)20V2.1A155 毫欧 @ 2.1A,4.5V1.2V @ 250µA

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NTHD4401PT3
MOSFET 2P-CH 20V 2.1A CHIPFET
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产品详情

Overview

The NTHD4102PT3G is MOSFET 2P-CH 20V 2.9A CHIPFET, that includes Tape & Reel (TR) Alternate Packaging Packaging, they are designed to operate with a 8-SMD, Flat Lead Package Case, it has an Operating Temperature range of -55°C ~ 150°C (TJ), that offers Mounting Type features such as Surface Mount, Supplier Device Package is designed to work in ChipFET?, as well as the 2 P-Channel (Dual) FET Type, the device can also be used as 1.1W Power Max. In addition, the Drain to Source Voltage Vdss is 20V, the device is offered in 750pF @ 16V Input Capacitance Ciss Vds, the device has a Logic Level Gate of FET Feature, and Current Continuous Drain Id 25°C is 2.9A, and the Rds On Max Id Vgs is 80 mOhm @ 2.9A, 4.5V, and Vgs th Max Id is 1.5V @ 250μA, and the Gate Charge Qg Vgs is 8.6nC @ 4.5V.

The NTHD4401PT1G is MOSFET 2P-CH 20V 2.1A CHIPFET, that includes 2.1A Current Continuous Drain Id 25°C, they are designed to operate with a 20V Drain to Source Voltage Vdss, FET Feature is shown on datasheet note for use in a Logic Level Gate, that offers FET Type features such as 2 P-Channel (Dual), Gate Charge Qg Vgs is designed to work in 6nC @ 4.5V, as well as the 300pF @ 10V Input Capacitance Ciss Vds, the device can also be used as Surface Mount Mounting Type, it has an Operating Temperature range of -55°C ~ 150°C (TJ), the device is offered in 8-SMD, Flat Lead Package Case, the device has a Cut Tape (CT) of Packaging, and Power Max is 1.1W, and the Rds On Max Id Vgs is 155 mOhm @ 2.1A, 4.5V, and Supplier Device Package is ChipFET?, and the Vgs th Max Id is 1.2V @ 250μA.

Features

Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
20V Drain to Source Voltage (Vdss)
2.1A Current - Continuous Drain (Id) @ 25°C
155mOhm @ 2.1A, 4.5V Rds On (Max) @ Id, Vgs
1.2V @ 250µA Vgs(th) (Max) @ Id
6nC @ 4.5V Gate Charge (Qg) (Max) @ Vgs
300pF @ 10V Input Capacitance (Ciss) (Max) @ Vds
1.1W Power - Max
Surface Mount Mounting Type
ChipFET™ Supplier Device Package
产品属性
全选
包装: 卷带(TR)
部件状态: 停产
技术: MOSFET(金属氧化物)
FET 功能: 逻辑电平门
配置: 2 个 P 沟道(双)
漏源电压(Vdss): 20V
25°C 时电流 - 连续漏极 (Id): 2.1A
漏极电流和栅极至源极电压下的最大导通电阻: 155 毫欧 @ 2.1A,4.5V
漏极电流下的最大栅极阈值电压: 1.2V @ 250µA
最大栅极电荷 (Qg) @ Vgs: 6nC @ 4.5V
Vds 时的最大输入电容 (Ciss): 300pF @ 10V
最大功率: 1.1W
工作温度: -55°C ~ 150°C(TJ)
安装类型: 表面贴装型
封装/外壳: 8-SMD,扁平引线
供应商器件封装: ChipFET™
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onsemi(前称ON Semiconductor)是一家全球领先的半导体供应商,致力于提供智能电源和传感技术。公司成立于1999年,总部位于美国亚利桑那州斯科茨代尔。onsemi的产品涵盖汽车、工业、电源管理和物联网等领域。

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