ON NSVR351SDSA3T1G

肖特基 - 1 对串联5V30 mA0.9pF @ 0.2V，1MHz-55°C ~ 125°C（TJ）

Overview

NSVR05F40NXT5G with pin details, that includes Automotive, AEC-Q101 Series, they are designed to operate with a Tape & Reel (TR) Packaging, Package Case is shown on datasheet note for use in a 2-XDFN, that offers Technology features such as Si, Mounting Type is designed to work in Surface Mount, as well as the 2-DSN (1x.60) Supplier Device Package, the device can also be used as Fast Recovery = 200mA (Io) Speed. In addition, the Diode Type is Schottky, the device is offered in 75μA @ 40V Current Reverse Leakage Vr, the device has a 460mV @ 500mA of Voltage Forward Vf Max If, and Voltage DC Reverse Vr Max is 40V, and the Current Average Rectified Io is 500mA (DC), and Capacitance Vr F is 35pF @ 10V, 1MHz, it has an Operating Temperature Junction range of -40°C ~ 150°C, and Pd Power Dissipation is 1.3 W, it has an Maximum Operating Temperature range of + 125 C, it has an Minimum Operating Temperature range of - 40 C, and the Vf Forward Voltage is 460 mV, and Ir Reverse Current is 75 uA, and the If Forward Current is 500 mA, and Vrrm Repetitive Reverse Voltage is 40 V, and the Ifsm Forward Surge Current is 10 A.

NSVR1020MW2T1G with EDA / CAD Models, that includes Tape & Reel (TR) Packaging, they are designed to operate with a Surface Mount Mounting Type, Supplier Device Package is shown on datasheet note for use in a SOD-323, that offers Diode Type features such as Schottky, Package Case is designed to work in SC-76, SOD-323, as well as the Fast Recovery = 200mA (Io) Speed, the device can also be used as Automotive, AEC-Q101 Series, it has an Operating Temperature Junction range of -55°C ~ 150°C, the device is offered in 540mV @ 1A Voltage Forward Vf Max If, the device has a 40μA @ 15V of Current Reverse Leakage Vr, and Capacitance Vr F is 29pF @ 5V, 1MHz, and the Voltage DC Reverse Vr Max is 20V, and Current Average Rectified Io is 1A (DC).

Features

Tape & Reel (TR) Package
5V Voltage - Peak Reverse (Max)
30 mA Current - Max
0.9pF @ 0.2V, 1MHz Capacitance @ Vr, F