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NSVJ3910SB3T1G

ON NSVJ3910SB3T1G

25 V50 mATO-236-3,SC-59,SOT-23-3

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NSVJ3910SB3T1G
JFET N-CH 25V 50MA 3CPH
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¥10.60

价格更新:一个月前

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产品详情

Overview

The NSVEMX1DXV6T1G is TRANS 2NPN 50V 0.1A SOT563, that includes EMX1 Series, they are designed to operate with a Tape & Reel (TR) Packaging, Unit Weight is shown on datasheet note for use in a 0.000106 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in SOT-563, SOT-666, as well as the Surface Mount Mounting Type, the device can also be used as SOT-563 Supplier Device Package. In addition, the Power Max is 500mW, the device is offered in 2 NPN (Dual) Transistor Type, the device has a 100mA of Current Collector Ic Max, and Voltage Collector Emitter Breakdown Max is 50V, and the DC Current Gain hFE Min Ic Vce is 120 @ 1mA, 6V, and Vce Saturation Max Ib Ic is 400mV @ 5mA, 50mA, and the Current Collector Cutoff Max is 500nA (ICBO), and Frequency Transition is 180MHz, and the Pd Power Dissipation is 357 mW, and Collector Emitter Voltage VCEO Max is 50 V, and the Transistor Polarity is NPN, and Emitter Base Voltage VEBO is 7 V, and the Continuous Collector Current is 100 mA, and DC Collector Base Gain hfe Min is 120.

The NSVF2250WT1G is TRANSISTOR NPN BIPO UHF SOT-323, that includes Tape & Reel (TR) Packaging, they are designed to operate with a Surface Mount Mounting Type, Supplier Device Package is shown on datasheet note for use in a SC-70-3 (SOT323), that offers Package Case features such as SC-70, SOT-323, Transistor Type is designed to work in NPN, as well as the 50mA Current Collector Ic Max, the device can also be used as 15V Voltage Collector Emitter Breakdown Max.

Features

25 V Voltage - Breakdown (V(BR)GSS)


  • Low Input Capacitance

  • Small Package CPH3(2.9mm x 2.8mm x 0.9mmt)

  • Low Noise Figure

  • AEC-Q101 qualified and PPAP capable

  • High Forward Transfer Admittance

  • High Breakdown Voltage

  • Pb-Free and RoHS compliance



Surface Mount Mounting Type

Applications


  • Low Noise Amplifier for Automotive AM Radio

  • Switch

  • Amplifier

  • Chopper

  • Buffer

  • As Voltage Controlled Resistors in the Operational Amplifiers


产品属性
全选
包装: 卷带(TR)
部件状态: 在售
场效应管类型: N 通道
击穿电压(栅极-源极-源极): 25 V
漏极至源极电压 (Vdss): 25 V
电流 - 漏极 (Idss) @ Vds(Vgs=0): 20 mA @ 5 V
耗尽电流 (Id) - 最大值: 50 mA
栅极-源极关态电压和漏极电流时的截止电压: 600 mV @ 100 µA
Vds 时的最大输入电容 (Ciss): 6pF @ 5V
最大功率: 400 mW
工作温度: -55°C ~ 150°C(TJ)
安装类型: 表面贴装型
包装 / 盒: TO-236-3,SC-59,SOT-23-3
供应商 设备封装: 3-CPH
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onsemi

onsemi(前称ON Semiconductor)是一家全球领先的半导体供应商,致力于提供智能电源和传感技术。公司成立于1999年,总部位于美国亚利桑那州斯科茨代尔。onsemi的产品涵盖汽车、工业、电源管理和物联网等领域。

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