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NSVBC817-40WT1G

ON NSVBC817-40WT1G

NPN500 mA45 V

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NSVBC817-40WT1G
TRANS NPN 45V 0.5A SC70-3
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¥0.27

价格更新:一个月前

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产品详情

Overview

NSVBC817-16LT1G with pin details, that includes Reel Packaging, they are designed to operate with a 0.050717 oz Unit Weight, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as SOT-23-3, Technology is designed to work in Si, as well as the Single Configuration, the device can also be used as 300 mW Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 65 C, the device has a 45 V of Collector Emitter Voltage VCEO Max, and Transistor Polarity is NPN, and the Collector Emitter Saturation Voltage is 700 mV, and Collector Base Voltage VCBO is 50 V, and the Emitter Base Voltage VEBO is 5 V, and Maximum DC Collector Current is 500 mA, and the Gain Bandwidth Product fT is 100 MHz, and DC Collector Base Gain hfe Min is 100, and the DC Current Gain hFE Max is 250.

The NSVBC114YDXV6T1G is TRANS 2NPN PREBIAS 0.5W SOT563, that includes Tape & Reel (TR) Packaging, they are designed to operate with a Surface Mount Mounting Type, Package Case is shown on datasheet note for use in a SOT-563, SOT-666, that offers Supplier Device Package features such as SOT-563, DC Current Gain hFE Min Ic Vce is designed to work in 80 @ 5mA, 10V, as well as the 50V Voltage Collector Emitter Breakdown Max, the device can also be used as 500nA Current Collector Cutoff Max. In addition, the Power Max is 500mW, the device is offered in 47k Resistor Emitter Base R2 Ohms, the device has a 250mV @ 300μA, 10mA of Vce Saturation Max Ib Ic, and Transistor Type is 2 NPN - Pre-Biased (Dual), and the Resistor Base R1 Ohms is 10k, and Current Collector Ic Max is 100mA.

Features

Tape & Reel (TR) Package
the DC current gain for this device is 250 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
a transition frequency of 100MHz

Surface Mount Mounting Type

Applications


There are a lot of ON Semiconductor
NSVBC817-40WT1G applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting
产品属性
全选
型号系列: Automotive, AEC-Q101
包装: 卷带(TR)
部件状态: 在售
晶体管类型: NPN
集电极电流 (Ic)(最大值): 500 mA
最大集电极-发射极击穿电压: 45 V
基极电流和集电极电流下的最大集电极-发射极饱和电压: 700mV @ 50mA,500mA
电流 - 集电极截止(最大值): 100nA(ICBO)
直流电流增益 (hFE) 最小值 @ Ic、Vce: 250 @ 100mA,1V
最大功率: 460 mW
频率 - 跃迁: 100MHz
工作温度: -55°C ~ 150°C(TJ)
安装类型: 表面贴装型
封装/外壳: SC-70,SOT-323
供应商器件封装: SC-70-3(SOT323)
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