ON NDS9933

MOSFET（金属氧化物）逻辑电平门2 个 P 沟道（双）20V3.2A110 毫欧 @ 3.2A，4.5V1V @ 250µA

Overview

This P-Channel enhancement mode power field effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to mini mize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage apllications such as DC motor control and DC/DC conversion where fast switching,low in-line power loss, and resistance to transients are needed.

• -2.8 A, -20 V. RDS(on) = 0.14 Ω @ VGS = -4.5 V RDS(on) = 0.19 Ω @ VGS = -2.7 V RDS(on) = 0.20 Ω @ VGS = -2.5 V. • High density cell design for extremely low RDS(on). • High power and current handling capability in a widely used surface mount package. • Dual MOSFET in surface mount package.

Features

·-2.8A,-20V.Rs(on)=0.14Ω @VGS=-4.5V

RDs(on)=0.19Ω@VGS=-2.7V RDs(on)=0.20Ω @VGs=-2.5V

*High density cell design for extremely low RDs(on)

·High power and current handling capability in a widely used surface mount package.

Dual MOSFET in surface mount package

Applications

 low-voltage applications