ON NDS8858H

MOSFET（金属氧化物）逻辑电平门N 和 P 沟道30V6.3A，4.8A35 毫欧 @ 4.8A，10V2.8V @ 250µA

Overview

The NDS8852H is MOSFET N/P-CH 30V 8SOIC, that includes Tape & Reel (TR) Packaging, they are designed to operate with a 8-SOIC (0.154", 3.90mm Width) Package Case, it has an Operating Temperature range of -55°C ~ 150°C (TJ), that offers Mounting Type features such as Surface Mount, Supplier Device Package is designed to work in 8-SO, as well as the N and P-Channel FET Type, the device can also be used as 1W Power Max. In addition, the Drain to Source Voltage Vdss is 30V, the device is offered in 300pF @ 15V Input Capacitance Ciss Vds, the device has a Logic Level Gate of FET Feature, and Current Continuous Drain Id 25°C is 4.3A, 3.4A, and the Rds On Max Id Vgs is 80 mOhm @ 3.4A, 10V, and Vgs th Max Id is 2.8V @ 250μA, and the Gate Charge Qg Vgs is 25nC @ 10V.

NDS8858 with circuit diagram manufactured by FAIRCHILD. The NDS8858 is available in SOP-8 Package, is part of the FETs - Arrays.

Features

Bulk Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
30V Drain to Source Voltage (Vdss)
6.3A, 4.8A Current - Continuous Drain (Id) @ 25°C
35mOhm @ 4.8A, 10V Rds On (Max) @ Id, Vgs
2.8V @ 250µA Vgs(th) (Max) @ Id
30nC @ 10V Gate Charge (Qg) (Max) @ Vgs
720pF @ 15V Input Capacitance (Ciss) (Max) @ Vds
1W Power - Max
Surface Mount Mounting Type

Applications

N-Channel 6.3A30VR=0.035@V=10V P-Channel-4.8A，-30V，R=0.065@Vs=-10V

 High density cell design or extremely low Rpsion

High power and current handling capability in a widely used surtace mount package.

Matched pair for equal input capacitance and power capability

 

NDS8858H                Applications

low-voltage half-bridge applications

CMOS applications