ON NDS8961

MOSFET（金属氧化物）逻辑电平门2 N-通道（双）30V3.1A100 毫欧 @ 3.1A，10V3V @ 250µA

Overview

The NDS8958 is MOSFET N/P-CH 30V 5.3A/4A 8SOIC, that includes Digi-ReelR Packaging, they are designed to operate with a 8-SOIC (0.154", 3.90mm Width) Package Case, it has an Operating Temperature range of -55°C ~ 150°C (TJ), that offers Mounting Type features such as Surface Mount, Supplier Device Package is designed to work in 8-SO, as well as the N and P-Channel FET Type, the device can also be used as 900mW Power Max. In addition, the Drain to Source Voltage Vdss is 30V, the device is offered in 720pF @ 15V Input Capacitance Ciss Vds, the device has a Logic Level Gate of FET Feature, and Current Continuous Drain Id 25°C is 5.3A, 4A, and the Rds On Max Id Vgs is 35 mOhm @ 5.3A, 10V, and Vgs th Max Id is 2.8V @ 250μA, and the Gate Charge Qg Vgs is 30nC @ 10V.

NDS8958-NL with circuit diagram manufactured by FAIRCHILD. The NDS8958-NL is available in SOP-8 Package, is part of the IC Chips.

Features

Bulk Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
30V Drain to Source Voltage (Vdss)
3.1A Current - Continuous Drain (Id) @ 25°C
100mOhm @ 3.1A, 10V Rds On (Max) @ Id, Vgs
3V @ 250µA Vgs(th) (Max) @ Id
10nC @ 10V Gate Charge (Qg) (Max) @ Vgs
190pF @ 15V Input Capacitance (Ciss) (Max) @ Vds
900mW Power - Max
Surface Mount Mounting Type