联系我们
中文
FDY2001PZ

ON FDY2001PZ

MOSFET(金属氧化物)逻辑电平门2 个 P 沟道(双)20V150mA8 欧姆 @ 150mA,4.5V1.5V @ 250µA

比较
onsemi
FDY2001PZ
MOSFET 2P-CH 20V 0.15A SOT-563F
paypalvisamastercarddiscover
upsdhlsf
比较

面议

价格更新:一个月前

博斯克质量保证

912ob9001 201514001 201545001 201813485 2016esdduns
产品详情

Overview

The FDY2000PZ is MOSFET 2P-CH 20V 0.35A SOT-563F, that includes PowerTrenchR Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Unit Weight is shown on datasheet note for use in a 0.001129 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in SOT-563, SOT-666, as well as the Si Technology, it has an Operating Temperature range of -55°C ~ 150°C (TJ). In addition, the Mounting Type is Surface Mount, the device is offered in 2 Channel Number of Channels, the device has a SC-89-6 of Supplier Device Package, and Configuration is Dual, and the FET Type is 2 P-Channel (Dual), and Power Max is 446mW, and the Transistor Type is 2 P-Channel, and Drain to Source Voltage Vdss is 20V, and the Input Capacitance Ciss Vds is 100pF @ 10V, and FET Feature is Logic Level Gate, and the Current Continuous Drain Id 25°C is 350mA, and Rds On Max Id Vgs is 1.2 Ohm @ 350mA, 4.5V, and the Vgs th Max Id is 1.5V @ 250μA, and Gate Charge Qg Vgs is 1.4nC @ 4.5V, and the Pd Power Dissipation is 630 mW, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 13 ns, and the Rise Time is 13 ns, and Vgs Gate Source Voltage is 8 V, and the Id Continuous Drain Current is 350 mA, and Vds Drain Source Breakdown Voltage is - 20 V, and the Rds On Drain Source Resistance is 1.2 Ohms, and Transistor Polarity is P-Channel, and the Typical Turn Off Delay Time is 8 ns, and Typical Turn On Delay Time is 6 ns, and the Forward Transconductance Min is 1.4 S, and Channel Mode is Enhancement.

FDY2000PZ-NL with circuit diagram manufactured by FAIRCHILD. The FDY2000PZ-NL is available in SOT-563F6L Package, is part of the IC Chips.

Features

PowerTrench® Series
Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
20V Drain to Source Voltage (Vdss)
150mA Current - Continuous Drain (Id) @ 25°C
8Ohm @ 150mA, 4.5V Rds On (Max) @ Id, Vgs
1.5V @ 250µA Vgs(th) (Max) @ Id
1.4nC @ 4.5V Gate Charge (Qg) (Max) @ Vgs
100pF @ 10V Input Capacitance (Ciss) (Max) @ Vds
446mW Power - Max
Surface Mount Mounting Type
产品属性
全选
型号系列: PowerTrench®
包装: 卷带(TR)
部件状态: 停产
技术: MOSFET(金属氧化物)
FET 功能: 逻辑电平门
配置: 2 个 P 沟道(双)
漏源电压(Vdss): 20V
25°C 时电流 - 连续漏极 (Id): 150mA
漏极电流和栅极至源极电压下的最大导通电阻: 8 欧姆 @ 150mA,4.5V
漏极电流下的最大栅极阈值电压: 1.5V @ 250µA
最大栅极电荷 (Qg) @ Vgs: 1.4nC @ 4.5V
Vds 时的最大输入电容 (Ciss): 100pF @ 10V
最大功率: 446mW
工作温度: -55°C ~ 150°C(TJ)
安装类型: 表面贴装型
封装/外壳: SOT-563,SOT-666
供应商器件封装: SOT-563F
onsemi

onsemi

onsemi(前称ON Semiconductor)是一家全球领先的半导体供应商,致力于提供智能电源和传感技术。公司成立于1999年,总部位于美国亚利桑那州斯科茨代尔。onsemi的产品涵盖汽车、工业、电源管理和物联网等领域。

实时新闻

博斯克数字

收入: 85M

2022年的收入为8500万美元,与2021年增长63%。

国家: 105

博斯克服务全球105个国家的客户。

配件发货: 25M+

我们在过去的五年中发货了2.5亿个配件,比前五年增长148%。

制造商: 950

2022年,博斯克从近950个制造商售卖了配件。

所有产品零件号 0 - Z