ON FDW2504P

MOSFET（金属氧化物）逻辑电平门2 个 P 沟道（双）20V3.8A43 毫欧 @ 3.8A，4.5V1.5V @ 250µA

Overview

The FDW2503N is MOSFET 2N-CH 20V 5.5A 8TSSOP, that includes PowerTrenchR Series, they are designed to operate with a Tape & Reel (TR) Packaging, Package Case is shown on datasheet note for use in a 8-TSSOP (0.173", 4.40mm Width), it has an Operating Temperature range of -55°C ~ 150°C (TJ), Mounting Type is designed to work in Surface Mount, as well as the 8-TSSOP Supplier Device Package, the device can also be used as 2 N-Channel (Dual) FET Type. In addition, the Power Max is 600mW, the device is offered in 20V Drain to Source Voltage Vdss, the device has a 1082pF @ 10V of Input Capacitance Ciss Vds, and FET Feature is Logic Level Gate, and the Current Continuous Drain Id 25°C is 5.5A, and Rds On Max Id Vgs is 21 mOhm @ 5.5A, 4.5V, and the Vgs th Max Id is 1.5V @ 250μA, and Gate Charge Qg Vgs is 17nC @ 4.5V.

FDW2503N-NL with circuit diagram manufactured by FSC. The FDW2503N-NL is available in TSSOP-8 Package, is part of the IC Chips.

Features

PowerTrench® Series
Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
20V Drain to Source Voltage (Vdss)
3.8A Current - Continuous Drain (Id) @ 25°C
43mOhm @ 3.8A, 4.5V Rds On (Max) @ Id, Vgs
1.5V @ 250µA Vgs(th) (Max) @ Id
16nC @ 4.5V Gate Charge (Qg) (Max) @ Vgs
1030pF @ 10V Input Capacitance (Ciss) (Max) @ Vds
600mW Power - Max
Surface Mount Mounting Type