ON FDS8934A

MOSFET（金属氧化物）逻辑电平门2 个 P 沟道（双）20V4A55 毫欧 @ 4A，4.5V1V @ 250µA

Overview

The FDS8928A is MOSFET N/P-CH 30V/20V 8SOIC, that includes Digi-ReelR Alternate Packaging Packaging, they are designed to operate with a FDS8928A_NL Part Aliases, Unit Weight is shown on datasheet note for use in a 0.006596 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in 8-SOIC (0.154", 3.90mm Width), as well as the Si Technology, it has an Operating Temperature range of -55°C ~ 150°C (TJ). In addition, the Mounting Type is Surface Mount, the device is offered in 2 Channel Number of Channels, the device has a 8-SO of Supplier Device Package, and Configuration is N-Channel P-Channel, and the FET Type is N and P-Channel, and Power Max is 900mW, and the Transistor Type is 1 N-Channel 1 P-Channel, and Drain to Source Voltage Vdss is 30V, 20V, and the Input Capacitance Ciss Vds is 900pF @ 10V, and FET Feature is Logic Level Gate, and the Current Continuous Drain Id 25°C is 5.5A, 4A, and Rds On Max Id Vgs is 30 mOhm @ 5.5A, 4.5V, and the Vgs th Max Id is 1V @ 250μA, and Gate Charge Qg Vgs is 28nC @ 4.5V, and the Pd Power Dissipation is 2 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 13 ns 90 ns, and the Rise Time is 19 ns 23 ns, and Vgs Gate Source Voltage is 8 V, and the Id Continuous Drain Current is 5.5 A, and Vds Drain Source Breakdown Voltage is 30 V - 20 V, and the Rds On Drain Source Resistance is 30 mOhms 55 mOhms, and Transistor Polarity is N-Channel P-Channel, and the Typical Turn Off Delay Time is 42 ns 260 ns, and Typical Turn On Delay Time is 6 ns 8 ns, and the Forward Transconductance Min is 20 S 13 S, and Channel Mode is Enhancement.

The FDS8934 is MOSFET 2P-CH 20V 4A 8SOIC manufactured by FDS. The FDS8934 is available in 8-SOIC (0.154", 3.90mm Width) Package, is part of the FETs - Arrays, , and with support for MOSFET 2P-CH 20V 4A 8SOIC.

Features

Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
20V Drain to Source Voltage (Vdss)
4A Current - Continuous Drain (Id) @ 25°C
55mOhm @ 4A, 4.5V Rds On (Max) @ Id, Vgs
1V @ 250µA Vgs(th) (Max) @ Id
28nC @ 5V Gate Charge (Qg) (Max) @ Vgs
1130pF @ 10V Input Capacitance (Ciss) (Max) @ Vds
900mW Power - Max
Surface Mount Mounting Type