Fairchild FDS8876

N 通道30 V12.5A（Ta）2.5V @ 250µA2.5W（Ta）-55°C ~ 150°C（TJ）表面贴装型

Overview

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

Features

• rDS(on) = 8.2m?, VGS = 10V, ID = 12.5A

• rDS(on) = 10.2m?, VGS = 4.5V, ID = 11.4A

• High performance trench technology for extremely low rDS(on)

• Low gate charge

• High power and current handling capability

• RoHS Compliant

Applications

• Power Management

• Consumer Electronics

• Portable Devices

• Industrial