ON FDME1034CZT

MOSFET（金属氧化物）逻辑电平门N 和 P 沟道20V3.8A，2.6A66 毫欧 @ 3.4A，4.5V1V @ 250µA

Overview

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

Features

Q1: N?Channel

? Max rDS(on) = 66 m at VGS = 4.5 V, ID = 3.4 A

? Max rDS(on) = 86 m at VGS = 2.5 V, ID = 2.9 A

? Max rDS(on) = 113 m at VGS = 1.8 V, ID = 2.5 A

? Max rDS(on) = 160 m at VGS = 1.5 V, ID = 2.1 A

Q2: P?Channel

? Max rDS(on) = 142 m at VGS = ?4.5 V, ID = ?2.3 A

? Max rDS(on) = 213 m at VGS = ?2.5 V, ID = ?1.8 A

? Max rDS(on) = 331 m at VGS = ?1.8 V, ID = ?1.5 A

? Max rDS(on) = 530 m at VGS = ?1.5 V, ID = ?1.2 A

? Low Profile: 0.55 mm Maximum in the New Package MicroFET

1.6x1.6 Thin

? Free from Halogenated Compounds and Antimony Oxides

? HBM ESD Protection Level > 1600 V (Note 3)

? This Device is Pb?Free and is RoHS Compliant

Applications

? DC?DC Conversion

? Level Shifted Load Switch