ON FDG6322C_D87Z

MOSFET（金属氧化物）逻辑电平门N 和 P 沟道25V220mA，410mA4 欧姆 @ 220mA，4.5V1.5V @ 250µA

Overview

Enhancement Mode Field Effect Transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

Features

Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
25V Drain to Source Voltage (Vdss)
220mA, 410mA Current - Continuous Drain (Id) @ 25°C
4Ohm @ 220mA, 4.5V Rds On (Max) @ Id, Vgs
1.5V @ 250µA Vgs(th) (Max) @ Id
0.4nC @ 4.5V Gate Charge (Qg) (Max) @ Vgs
9.5pF @ 10V Input Capacitance (Ciss) (Max) @ Vds
300mW Power - Max
Surface Mount Mounting Type