ON FDG6320C

MOSFET（金属氧化物）逻辑电平门N 和 P 沟道25V220mA，140mA4 欧姆 @ 220mA，4.5V1.5V @ 250µA

Overview

These dual N & P-Channel logic level enhancement mode field effect transistors are produced using a proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETS. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.

Features

N-Ch 0.22 A, 25 V,

RDS(ON) = 4.0 |? @ VGS= 4.5 V,

RDS(ON) = 5.0 |? @ VGS= 2.7 V.

P-Ch -0.14 A, -25 V,

RDS(ON) = 10 |? @ VGS= -4.5 V,

RDS(ON) = 13 |? @ VGS= -2.7 V.

Very small package outline SC70-6.

Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) < 1.5 V).

Gate-Source Zener for ESD ruggedness (>6kV Human Body Model).

Applications

This product is general usage and suitable for many different applications.