ON FDG6308P

MOSFET（金属氧化物）逻辑电平门2 个 P 沟道（双）20V600mA400 毫欧 @ 600mA，4.5V1.5V @ 250µA

Features

–0.6 A, –20 V.

RDS(ON)= 0.40Ω @ VGS = –4.5 V

RDS(ON) = 0.55Ω @ VGS = –2.5 V

RDS(ON) = 0.80Ω @ VGS = –1.8 V

Low gate charge

High performance trench technology for extremelylow RDS(ON)

Compact industry standard SC70-6 surface mountpackage

Applications

This product is general usage and suitable for many different applications.