ON FDC6401N

MOSFET（金属氧化物）2 N-通道（双）20V3A70 毫欧 @ 3A，4.5V1.5V @ 250µA

Overview

ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies. The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

Features

• Low gate charge

• RDS(ON) = 95 mΩ @ VGS = 2.5 V

• 3.0 A, 20 V

• High power and current handling capability

• RDS(ON) = 70 mΩ @ VGS = 4.5 V

• High-performance trench technology for extremely low RDS(on)

Applications

• Power Management

• Battery Protection

• DC/DC Converter

• Switching

• Servo Control