ON FDC6333C

MOSFET（金属氧化物）逻辑电平门N 和 P 沟道30V2.5A，2A95 毫欧 @ 2.5A，10V3V @ 250µA

Overview

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

Features

• Q1 2.5 A, 30V

• RDS(on) = 95 mΩ@ VGS = 10 V

• RDS(on) = 150 mΩ @ VGS = 4.5 V

• Q2 –2.0 A, 30V.

• RDS(on) = 150 mΩ@ VGS = -10 V

• RDS(on) = 220 mΩ @ VGS = -4.5 V

• Low gate charge

• High-performance trench technology for extremely low RDS(ON)

• SuperSOT –6 package: small footprint (72% smaller than SO-8); low profile (1mm thick).

Applications

• Industrial

• Power Management

• DC/DC converter

• Load switch

• LCD display inverter