ON FDC6322C

MOSFET（金属氧化物）逻辑电平门N 和 P 沟道25V220mA，460mA4 欧姆 @ 400mA，4.5V1.5V @ 250µA

Features

• N-Ch 25 V, 0.22 A, 5 W at 2.7 V VGS(ON)

• P-Ch 25 V, -0.46 A, 1.5 W @ -2.7 V, RDS(ON).

• Direct operation in 3 V circuits is made possible by the extremely low level gate drive requirements. 1.5 V for VGS(th).

• For ESD toughness, use a Gate-Source Zener. >6kV Human Body Model

• Replace the digital transistors PNP and NPN.

Applications

Switching applications