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BSR58,215

NXP BSR58,215

40 V60 OhmsTO-236-3,SC-59,SOT-23-3

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NXP USA Inc.
BSR58,215
JFET N-CH 40V SOT23
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¥2.10

价格更新:一个月前

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产品详情

Overview

The BSR58 is JFET N-CH 40V 0.25W SOT-23, that includes Digi-ReelR Alternate Packaging Packaging, they are designed to operate with a BSR58_NL Part Aliases, Unit Weight is shown on datasheet note for use in a 0.002116 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in TO-236-3, SC-59, SOT-23-3, as well as the Surface Mount Mounting Type, the device can also be used as SOT-23-3 Supplier Device Package. In addition, the Configuration is Single, the device is offered in N-Channel FET Type, the device has a 250mW of Power Max, and Voltage Breakdown V BRGSS is 40V, and the Current Drain Idss Vds Vgs=0 is 8mA @ 15V, and Voltage Cutoff VGS off Id is 800mV @ 0.5nA, and the Resistance RDS On is 60 Ohm, and Pd Power Dissipation is 250 mW, and the Rds On Drain Source Resistance is 60 Ohms, and Transistor Polarity is N-Channel, and the Vgs Gate Source Breakdown Voltage is - 40 V.

The BSR57,215 is JFET N-CH 40V 250MW SOT23, that includes 20mA @ 15V Current Drain Idss Vds Vgs=0, they are designed to operate with a 40V Drain to Source Voltage Vdss, FET Type is shown on datasheet note for use in a N-Channel, that offers Mounting Type features such as Surface Mount, Package Case is designed to work in TO-236-3, SC-59, SOT-23-3, as well as the Tape & Reel (TR) Packaging, the device can also be used as 250mW Power Max. In addition, the Resistance RDS On is 40 Ohm, the device is offered in SOT-23 (TO-236AB) Supplier Device Package, the device has a 40V of Voltage Breakdown V BRGSS, and Voltage Cutoff VGS off Id is 5V @ 0.5nA.

Features

Tape & Reel (TR) Package
40 V Voltage - Breakdown (V(BR)GSS)
40 V Drain to Source Voltage (Vdss)
8 mA @ 15 V Current - Drain (Idss) @ Vds (Vgs=0)
800 mV @ 0.5 nA Voltage - Cutoff (VGS off) @ Id
60 Ohms Resistance - RDS(On)
250 mW Power - Max
150°C (TJ) Operating Temperature
Surface Mount Mounting Type
产品属性
全选
包装: 卷带(TR)
部件状态: 停产
FET 类型: N 通道
击穿电压(栅极-源极-源极): 40 V
漏源电压(Vdss): 40 V
不同 Vds (Vgs=0) 时电流 - 漏极 (Idss): 8 mA @ 15 V
栅极-源极关态电压和漏极电流时的截止电压: 800 mV @ 0.5 nA
国内抵制: 60 Ohms
最大功率: 250 mW
工作温度: 150°C(TJ)
安装类型: 表面贴装型
封装/外壳: TO-236-3,SC-59,SOT-23-3
供应商器件封装: SOT-23(TO-236AB)
NXP USA Inc.

NXP USA Inc.

NXP USA Inc.是NXP Semiconductors在美国的子公司,负责设计、研发、制造和销售半导体产品。公司在德克萨斯州奥斯汀和亚利桑那州钱德勒设有晶圆制造设施,专注于为汽车、工业和通信市场提供高性能解决方案。

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