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BSR50

ON BSR50

NPN - 达林顿1.5 A45 V

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BSR50
TRANS NPN DARL 45V 1.5A TO92-3
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产品详情

Overview

The BSR43TA is TRANS NPN 80V 1A SOT-89, that includes BSR43 Series, they are designed to operate with a Reel Packaging, Unit Weight is shown on datasheet note for use in a 0.001834 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in SOT-89, as well as the Single Configuration, the device can also be used as 1 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 65 C, the device has a 80 V of Collector Emitter Voltage VCEO Max, and Transistor Polarity is NPN, and the Collector Emitter Saturation Voltage is 0.5 V, and Collector Base Voltage VCBO is 90 V, and the Emitter Base Voltage VEBO is 5 V, and Maximum DC Collector Current is 1 A, and the Gain Bandwidth Product fT is 100 MHz, and Continuous Collector Current is 1 A, and the DC Collector Base Gain hfe Min is 30 at 100 uA at 5 V 100 at 100 mA at 5 V 50 at 500 mA at 5 V, and DC Current Gain hFE Max is 30 at 100 uA at 5 V.

BSR43 with circuit diagram manufactured by NXP. The BSR43 is available in SOT89 Package, is part of the IC Chips.

Features

Bulk Package
the DC current gain for this device is 2000 @ 500mA 10V
the vce saturation(Max) is 1.6V @ 4mA, 1A

Through Hole Mounting Type

Applications


There are a lot of ON Semiconductor
BSR50 applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting
产品属性
全选
包装: 散装
部件状态: 停产
晶体管类型: NPN - 达林顿
集电极电流 (Ic)(最大值): 1.5 A
最大集电极-发射极击穿电压: 45 V
基极电流和集电极电流下的最大集电极-发射极饱和电压: 1.6V @ 4mA,1A
电流 - 集电极截止(最大值): 50nA(ICBO)
直流电流增益 (hFE) 最小值 @ Ic、Vce: 2000 @ 500mA,10V
最大功率: 625 mW
工作温度: -55°C ~ 150°C(TJ)
安装类型: 通孔
封装/外壳: TO-226-3,TO-92-3 标准主体(!--TO-226AA)
供应商器件封装: TO-92-3
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