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BSR57,215

NXP BSR57,215

40 V40 OhmsTO-236-3,SC-59,SOT-23-3

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NXP USA Inc.
BSR57,215
JFET N-CH 40V SOT23
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¥0.17

价格更新:一个月前

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产品详情

Overview

The BSR56 is JFET N-CH 40V 250MW SOT23, that includes Digi-ReelR Alternate Packaging Packaging, they are designed to operate with a 0.002116 oz Unit Weight, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as TO-236-3, SC-59, SOT-23-3, Mounting Type is designed to work in Surface Mount, as well as the SOT-23-3 Supplier Device Package, the device can also be used as Single Configuration. In addition, the FET Type is N-Channel, the device is offered in 250mW Power Max, the device has a 40V of Voltage Breakdown V BRGSS, and Current Drain Idss Vds Vgs=0 is 50mA @ 15V, and the Voltage Cutoff VGS off Id is 4V @ 0.5nA, and Resistance RDS On is 25 Ohm, and the Pd Power Dissipation is 250 mW, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Vds Drain Source Breakdown Voltage is 750 mV, and the Rds On Drain Source Resistance is 25 Ohms, and Transistor Polarity is N-Channel, and the Gate Source Cutoff Voltage is 4 V, and Maximum Drain Gate Voltage is 40 V.

The BSR56,215 is JFET N-CH 40V 0.25W SOT23, that includes 20mA Current Drain Id Max, they are designed to operate with a 50mA @ 15V Current Drain Idss Vds Vgs=0, Drain to Source Voltage Vdss is shown on datasheet note for use in a 40V, that offers FET Type features such as N-Channel, Mounting Type is designed to work in Surface Mount, as well as the TO-236-3, SC-59, SOT-23-3 Package Case, the device can also be used as Digi-ReelR Alternate Packaging Packaging. In addition, the Power Max is 250mW, the device is offered in 25 Ohm Resistance RDS On, the device has a SOT-23 (TO-236AB) of Supplier Device Package, and Voltage Breakdown V BRGSS is 40V, and the Voltage Cutoff VGS off Id is 4V @ 0.5nA.

Features

Tape & Reel (TR) Package
40 V Voltage - Breakdown (V(BR)GSS)
40 V Drain to Source Voltage (Vdss)
20 mA @ 15 V Current - Drain (Idss) @ Vds (Vgs=0)
5 V @ 0.5 nA Voltage - Cutoff (VGS off) @ Id
40 Ohms Resistance - RDS(On)
250 mW Power - Max
150°C (TJ) Operating Temperature
Surface Mount Mounting Type
产品属性
全选
包装: 卷带(TR)
部件状态: 停产
FET 类型: N 通道
击穿电压(栅极-源极-源极): 40 V
漏源电压(Vdss): 40 V
不同 Vds (Vgs=0) 时电流 - 漏极 (Idss): 20 mA @ 15 V
栅极-源极关态电压和漏极电流时的截止电压: 5 V @ 0.5 nA
国内抵制: 40 Ohms
最大功率: 250 mW
工作温度: 150°C(TJ)
安装类型: 表面贴装型
封装/外壳: TO-236-3,SC-59,SOT-23-3
供应商器件封装: SOT-23(TO-236AB)
NXP USA Inc.

NXP USA Inc.

NXP USA Inc.是NXP Semiconductors在美国的子公司,负责设计、研发、制造和销售半导体产品。公司在德克萨斯州奥斯汀和亚利桑那州钱德勒设有晶圆制造设施,专注于为汽车、工业和通信市场提供高性能解决方案。

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