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UPS835LE3/TR13

Microsemi UPS835LE3/TR13

肖特基35 V8A

比较
UPS835LE3/TR13
DIODE SCHOTTKY 35V 8A POWERMITE3
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¥10.33

价格更新:一个月前

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产品详情

Overview

The UPS760E3/TR13 is DIODE SCHOTTKY 60V 7A POWERMITE3, that includes Schottky Rectifiers Product, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as PowermiteR3, Mounting Type is designed to work in Surface Mount, as well as the Powermite 3 Supplier Device Package, the device can also be used as Fast Recovery = 200mA (Io) Speed. In addition, the Diode Type is Schottky, the device is offered in 100μA @ 60V Current Reverse Leakage Vr, the device has a 600mV @ 7A of Voltage Forward Vf Max If, and Voltage DC Reverse Vr Max is 60V, and the Current Average Rectified Io is 7A, and Capacitance Vr F is 375pF @ 4V, 1MHz, it has an Operating Temperature Junction range of -55°C ~ 125°C, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Vf Forward Voltage is 550 mV, and the Vr Reverse Voltage is 60 V, and Ir Reverse Current is 15 uA, and the If Forward Current is 7 A, and Vrrm Repetitive Reverse Voltage is 60 V, and the Ifsm Forward Surge Current is 100 A.

The UP-S6-SP605-CONN-G is KIT EVAL SPARTAN 6 SP605, that includes Upgrade Kit Accessory Type, they are designed to operate with a SpartanR FPGA Evaluation Kit For Use With Related Products, Series is shown on datasheet note for use in a SpartanR-6.

Features

Tape & Reel (TR) Package
the forward peak voltage is 0.51

Powermite 3 Supplier Device Package

Applications


There are a lot of Microsemi
UPS835LE3/TR13 applications of RF diodes.

  • Radar systems for industrial use
  • Ultra high-speed switching
  • Clamping circuits
  • Diode ring mixer
  • RF detector
  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches
产品属性
全选
包装: 卷带(TR)
部件状态: 在售
技术: 肖特基
最大直流反向电压: 35 V
平均整流电流 (Io): 8A
正向电流时的最大正向电压: 510 mV @ 8 A
速度: 快速恢复 =< 500ns,> 200mA(Io)
不同 Vr 时电流 - 反向泄漏: 1.4 mA @ 35 V
安装类型: 表面贴装型
封装/外壳: Powermite®3
供应商器件封装: Powermite 3
结点工作温度: -55°C ~ 125°C
Microsemi Corporation

Microsemi Corporation

Microsemi Corporation是一家提供高性能半导体和系统解决方案的公司,专注于通信、国防与安全、航空和工业市场。公司成立于1959年,总部位于美国加利福尼亚州阿利索维耶荷。Microsemi于2018年被Microchip Technology收购。

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