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UES1302

Microsemi UES1302

标准100 V6A

比较
UES1302
DIODE GEN PURP 100V 6A AXIAL
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¥0.32

价格更新:一个月前

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产品详情

Overview

The UES1103SM is DIODE GEN PURP 150V 2.5A A-MELF, that includes Bulk Packaging, they are designed to operate with a Through Hole Mounting Style, Package Case is shown on datasheet note for use in a SQ-MELF, A, that offers Mounting Type features such as Surface Mount, Supplier Device Package is designed to work in A-MELF, as well as the Fast Recovery = 200mA (Io) Speed, the device can also be used as Standard Diode Type. In addition, the Current Reverse Leakage Vr is 2μA @ 150V, the device is offered in 975mV @ 2A Voltage Forward Vf Max If, the device has a 150V of Voltage DC Reverse Vr Max, and Current Average Rectified Io is 2.5A, and the Reverse Recovery Time trr is 25ns, it has an Operating Temperature Junction range of 175°C (Max).

The UES1106 is DIODE GEN PURP 400V 1A AXIAL, that includes 1A Current Average Rectified Io, they are designed to operate with a 10μA @ 400V Current Reverse Leakage Vr, Diode Type is shown on datasheet note for use in a Standard, that offers Mounting Type features such as Through Hole, it has an Operating Temperature Junction range of -55°C ~ 150°C, as well as the A, Axial Package Case, the device can also be used as Bulk Packaging. In addition, the Reverse Recovery Time trr is 50ns, the device is offered in Fast Recovery = 200mA (Io) Speed, the device has a 400V of Voltage DC Reverse Vr Max, and Voltage Forward Vf Max If is 1.25V @ 1A.

Features

Bulk Package
an average rectified current of 6A volts
a current rating of 6A
the peak reverse is 5μA

Axial Supplier Device Package

Applications


There are a lot of Microsemi Corporation
UES1302 applications of single-phase diode rectifier.

  • DC motor control and drives
  • Battery chargers
  • Welders
  • Power converters
  • Reverse Polarity Protection
  • Ultra High-Speed Switching
  • Freewheeling
  • Polarity Protection Diode
  • Recirculating Diode
  • Switching Diode
产品属性
全选
包装: 散装
部件状态: 在售
技术: 标准
最大直流反向电压: 100 V
平均整流电流 (Io): 6A
正向电流时的最大正向电压: 925 mV @ 6 A
速度: 快速恢复 =< 500ns,> 200mA(Io)
反向恢复时间 (trr): 30 ns
不同 Vr 时电流 - 反向泄漏: 5 µA @ 100 V
安装类型: 通孔
封装/外壳: 轴向
供应商器件封装: 轴向
结点工作温度: -55°C ~ 175°C
Microsemi Corporation

Microsemi Corporation

Microsemi Corporation是一家提供高性能半导体和系统解决方案的公司,专注于通信、国防与安全、航空和工业市场。公司成立于1959年,总部位于美国加利福尼亚州阿利索维耶荷。Microsemi于2018年被Microchip Technology收购。

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