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UES1103

Microsemi UES1103

标准150 V2.5A

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UES1103
DIODE GEN PURP 150V 2.5A AXIAL
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¥149.14

价格更新:一个月前

博斯克质量保证

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产品详情

Overview

The UES1102SM is DIODE GEN PURP 100V 2.5A A-MELF, that includes Bulk Packaging, they are designed to operate with a Through Hole Mounting Style, Package Case is shown on datasheet note for use in a SQ-MELF, A, that offers Mounting Type features such as Surface Mount, Supplier Device Package is designed to work in A-MELF, as well as the Fast Recovery = 200mA (Io) Speed, the device can also be used as Standard Diode Type. In addition, the Current Reverse Leakage Vr is 2μA @ 100V, the device is offered in 100V Voltage DC Reverse Vr Max, the device has a 2.5A of Current Average Rectified Io, and Reverse Recovery Time trr is 25ns, and the Capacitance Vr F is 3.5pF @ 6V, 1MHz, it has an Operating Temperature Junction range of 150°C (Max).

The UES1101SM is Rectifiers Ultra Fast Rectifier (less than 100ns), that includes Through Hole Mounting Style.

Features

Bulk Package
an average rectified current of 2.5A volts
the peak reverse is 2μA

175°C (Max) Operating Temperature - Junction

Applications


There are a lot of Microsemi Corporation
UES1103 applications of single-phase diode rectifier.

  • DC motor control and drives
  • Battery chargers
  • Welders
  • Power converters
  • Reverse Polarity Protection
  • Ultra High-Speed Switching
  • Freewheeling
  • Polarity Protection Diode
  • Recirculating Diode
  • Switching Diode
产品属性
全选
包装: 散装
部件状态: 在售
技术: 标准
最大直流反向电压: 150 V
平均整流电流 (Io): 2.5A
正向电流时的最大正向电压: 975 mV @ 2 A
速度: 快速恢复 =< 500ns,> 200mA(Io)
反向恢复时间 (trr): 25 ns
不同 Vr 时电流 - 反向泄漏: 2 µA @ 150 V
安装类型: 通孔
封装/外壳: A,轴向
供应商器件封装: A,轴向
结点工作温度: 175°C(最大)
Microsemi Corporation

Microsemi Corporation

Microsemi Corporation是一家提供高性能半导体和系统解决方案的公司,专注于通信、国防与安全、航空和工业市场。公司成立于1959年,总部位于美国加利福尼亚州阿利索维耶荷。Microsemi于2018年被Microchip Technology收购。

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