Microsemi MSC030SDA120B

SiC（Silicon Carbide）Schottky1200 V30A

Overview

Microsemi SiC Schottky Barrier Diodes (SBD) offer superior dynamic and thermal performance over conventional Silicon power diodes. SiC (Silicon Carbide) Barrier Diodes are comprised of Silicon (Si) and Carbon (C). Compared to Silicon-only devices, SiC devices offer a much greater dielectric breakdown field strength, higher bandgap, and higher thermal conductivity. SiC Schottky Diodes feature zero forward and reverse recovery charge, which reduces diode switching losses. These devices also offer temperature independent switching, ensuring stable high temperature performance.

Features

Tube Package

Through Hole Mounting Type

Applications

There are a lot of Microsemi Corporation
MSC030SDA120B applications of single-phase diode rectifier.

• DC motor control and drives
• Battery chargers
• Welders
• Power converters
• Reverse Polarity Protection
• Ultra High-Speed Switching
• Freewheeling
• Polarity Protection Diode
• Recirculating Diode
• Switching Diode