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JANTX2N6804

Microsemi JANTX2N6804

P 通道100 V11A(Tc)4V @ 250µA4W(Ta),75W(Tc)-55°C ~ 150°C(TJ)通孔

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JANTX2N6804
MOSFET P-CH 100V 11A TO204AA
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¥92.59

价格更新:一个月前

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产品详情

Overview

The JANTX2N6796 is MOSFET N-CH 100V 8A, that includes Reel Packaging, they are designed to operate with a Through Hole Mounting Style, Package Case is shown on datasheet note for use in a TO-39-3, that offers Technology features such as Si, Number of Channels is designed to work in 1 Channel, as well as the Single Configuration, the device can also be used as 1 N-Channel Transistor Type. In addition, the Pd Power Dissipation is 800 mW, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 45 ns, and the Rise Time is 75 ns, and Vgs Gate Source Voltage is +/- 20 V, and the Id Continuous Drain Current is 8 A, and Vds Drain Source Breakdown Voltage is 100 V, and the Vgs th Gate Source Threshold Voltage is 4 V, and Rds On Drain Source Resistance is 180 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 300 ns, and the Typical Turn On Delay Time is 30 ns, and Qg Gate Charge is 28.51 nC, and the Channel Mode is Enhancement.

The JANTX2N6800 is MOSFET N-CH manufactured by IR. The JANTX2N6800 is available in CAN Package, is part of the FETs - Single, , and with support for MOSFET N-CH, N-Channel 400V 3A (Tc) 800mW (Ta), 25W (Tc) Through Hole TO-205AF (TO-39), Trans 400V 3A 3-Pin TO-39.

Features

Bulk Package
a continuous drain current (ID) of 11A
the turn-off delay time is 140 ns
a 100V drain to source voltage (Vdss)

Through Hole Mounting Type

Applications


There are a lot of Microsemi Corporation
JANTX2N6804 applications of single MOSFETs transistors.

  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
产品属性
全选
型号系列: Military, MIL-PRF-19500/562
包装: 散装
部件状态: 停产
FET 类型: P 通道
技术: MOSFET(金属氧化物)
漏源电压(Vdss): 100 V
25°C 时电流 - 连续漏极 (Id): 11A(Tc)
最大驱动电压(Rds 开启),最小驱动电压(Rds 开启): 10V
漏极电流和栅极至源极电压下的最大导通电阻: 360 毫欧 @ 11A,10V
漏极电流下的最大栅极阈值电压: 4V @ 250µA
最大栅极电荷 (Qg) @ Vgs: 29 nC @ 10 V
最大栅极源电压: ±20V
最大功率耗散: 4W(Ta),75W(Tc)
工作温度: -55°C ~ 150°C(TJ)
安装类型: 通孔
供应商器件封装: TO-204AA
封装/外壳: TO-204AA,TO-3
Microsemi Corporation

Microsemi Corporation

Microsemi Corporation是一家提供高性能半导体和系统解决方案的公司,专注于通信、国防与安全、航空和工业市场。公司成立于1959年,总部位于美国加利福尼亚州阿利索维耶荷。Microsemi于2018年被Microchip Technology收购。

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