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JANTX1N5811US

Microsemi JANTX1N5811US

标准150 V3A

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JANTX1N5811US
DIODE GEN PURP 150V 3A B SQ-MELF
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¥95.00

价格更新:一个月前

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产品详情

Overview

The JANTX1N5809US is DIODE GEN PURP 100V 3A B-MELF, that includes Military, MIL-PRF-19500/477 Series, they are designed to operate with a Ultra Fast Recovery Rectifiers Product, Packaging is shown on datasheet note for use in a Bulk, that offers Mounting Style features such as SMD/SMT, it has an Operating Temperature Range range of - 65 C to + 175 C, as well as the SQ-MELF, B Package Case, the device can also be used as Surface Mount Mounting Type. In addition, the Supplier Device Package is B, SQ-MELF, the device is offered in Fast Recovery = 200mA (Io) Speed, the device has a Standard of Diode Type, and Current Reverse Leakage Vr is 5μA @ 100V, and the Voltage Forward Vf Max If is 875mV @ 4A, and Voltage DC Reverse Vr Max is 100V, and the Current Average Rectified Io is 3A, and Reverse Recovery Time trr is 30ns, and the Capacitance Vr F is 60pF @ 10V, 1MHz, it has an Operating Temperature Junction range of -65°C ~ 175°C, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 65 C, and the Vf Forward Voltage is 875 mV, and Vr Reverse Voltage is 100 V, and the Ir Reverse Current is 5 uA, and If Forward Current is 6 A, and the Max Surge Current is 125 A, and Recovery Time is 30 ns.

JANTX1N5811URS with circuit diagram, that includes 60pF @ 10V, 1MHz Capacitance Vr F, they are designed to operate with a 3A Current Average Rectified Io, Current Reverse Leakage Vr is shown on datasheet note for use in a 5μA @ 150V, that offers Diode Type features such as Standard, Mounting Type is designed to work in Surface Mount, as well as the SMD/SMT Mounting Style, it has an Operating Temperature Junction range of -65°C ~ 175°C. In addition, the Package Case is SQ-MELF, B, the device is offered in Bulk Packaging, the device has a 30ns of Reverse Recovery Time trr, and Series is Military, MIL-PRF-19500/477, and the Speed is Fast Recovery = 200mA (Io), and Supplier Device Package is B, SQ-MELF, and the Voltage DC Reverse Vr Max is 150V, and Voltage Forward Vf Max If is 875mV @ 4A.

Features

Bulk Package
an average rectified current of 3A volts
3A is the maximum value

Surface Mount Mounting Type

Applications


There are a lot of Microsemi Corporation
JANTX1N5811US applications of single-phase diode rectifier.

  • DC motor control and drives
  • Battery chargers
  • Welders
  • Power converters
  • Reverse Polarity Protection
  • Ultra High-Speed Switching
  • Freewheeling
  • Polarity Protection Diode
  • Recirculating Diode
  • Switching Diode
产品属性
全选
型号系列: Military, MIL-PRF-19500/477
包装: 散装
部件状态: 在售
技术: 标准
最大直流反向电压: 150 V
平均整流电流 (Io): 3A
正向电流时的最大正向电压: 875 mV @ 4 A
速度: 快速恢复 =< 500ns,> 200mA(Io)
反向恢复时间 (trr): 30 ns
不同 Vr 时电流 - 反向泄漏: 5 µA @ 150 V
Vr 时的电容,F: 60pF @ 10V,1MHz
安装类型: 表面贴装型
封装/外壳: SQ-MELF,B
供应商器件封装: B,SQ-MELF
结点工作温度: -65°C ~ 175°C
Microsemi Corporation

Microsemi Corporation

Microsemi Corporation是一家提供高性能半导体和系统解决方案的公司,专注于通信、国防与安全、航空和工业市场。公司成立于1959年,总部位于美国加利福尼亚州阿利索维耶荷。Microsemi于2018年被Microchip Technology收购。

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