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APT80GP60B2G

Microsemi APT80GP60B2G

600 V100 ATO-247-3 变式

比较
APT80GP60B2G
IGBT 600V 100A 1041W TMAX
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¥15.90

价格更新:一个月前

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产品详情

Overview

The APT80GA90LD40 is IGBT 900V 145A 625W TO-264, that includes POWER MOS 8? Series, they are designed to operate with a Tube Packaging, Unit Weight is shown on datasheet note for use in a 1.340411 oz, that offers Mounting Style features such as Through Hole, Package Case is designed to work in TO-264-3, TO-264AA, as well as the Standard Input Type, the device can also be used as Through Hole Mounting Type. In addition, the Supplier Device Package is TO-264, the device is offered in 625W Power Max, the device has a 25ns of Reverse Recovery Time trr, and Current Collector Ic Max is 145A, and the Voltage Collector Emitter Breakdown Max is 900V, and IGBT Type is PT, and the Current Collector Pulsed Icm is 239A, and Vce on Max Vge Ic is 3.1V @ 15V, 47A, and the Switching Energy is 1652μJ (on), 1389μJ (off), and Gate Charge is 200nC, and the Td on off 25°C is 18ns/149ns, and Test Condition is 600V, 47A, 4.7 Ohm, 15V.

APT80GP60B2 with circuit diagram manufactured by APT. The APT80GP60B2 is available in TO-3P Package, is part of the IC Chips.

Features

POWER MOS 7® Series
Tube Package
PT IGBT Type
600 V Voltage - Collector Emitter Breakdown (Max)
100 A Current - Collector (Ic) (Max)
2.7V @ 15V, 80A Vce(on) (Max) @ Vge, Ic
1041 W Power - Max
Standard Input Type
Through Hole Mounting Type
产品属性
全选
型号系列: POWER MOS 7®
包装: 管件
部件状态: 在售
IGBT 类型: PT
最大集电极-发射极击穿电压: 600 V
集电极电流 (Ic)(最大值): 100 A
栅极-发射极电压和集电极电流时的最大集电极-发射极导通电压: 2.7V @ 15V,80A
最大功率: 1041 W
输入类型: 标准
安装类型: 通孔
封装/外壳: TO-247-3 变式
供应商器件封装: T-MAX™ [B2]
Microsemi Corporation

Microsemi Corporation

Microsemi Corporation是一家提供高性能半导体和系统解决方案的公司,专注于通信、国防与安全、航空和工业市场。公司成立于1959年,总部位于美国加利福尼亚州阿利索维耶荷。Microsemi于2018年被Microchip Technology收购。

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