Microsemi APT70SM70B

N 通道700 V65A（Tc）2.5V @ 1mA300W（Tc）-55°C ~ 175°C（TJ）通孔

Overview

The APT70GR120L is IGBT 1200V 160A 961W TO264, that includes Tube Packaging, they are designed to operate with a TO-264-3, TO-264AA Package Case, Input Type is shown on datasheet note for use in a Standard, that offers Mounting Type features such as Through Hole, Supplier Device Package is designed to work in TO-264, as well as the 961W Power Max, the device can also be used as 160A Current Collector Ic Max. In addition, the Voltage Collector Emitter Breakdown Max is 1200V, the device is offered in NPT IGBT Type, the device has a 280A of Current Collector Pulsed Icm, and Vce on Max Vge Ic is 3.2V @ 15V, 70A, and the Switching Energy is 3.82mJ (on), 2.58mJ (off), and Gate Charge is 544nC, and the Td on off 25°C is 33ns/278ns, and Test Condition is 600V, 70A, 4.3 Ohm, 15V.

APT70GR65B2SCD30 with EDA / CAD Models manufactured by Microsemi. is part of the IGBTs - Single, , and with support for IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8, IGBT NPT 650V 134A 595W Through Hole T-MAX? [B2], Trans IGBT Chip N-CH 650V 134A 595000mW.

Features

Bulk Package
SiCFET (Silicon Carbide) Technology
700 V Drain to Source Voltage (Vdss)
65A (Tc) Current - Continuous Drain (Id) @ 25°C
20V Drive Voltage (Max Rds On, Min Rds On)
70mOhm @ 32.5A, 20V Rds On (Max) @ Id, Vgs
2.5V @ 1mA Vgs(th) (Max) @ Id
125 nC @ 20 V Gate Charge (Qg) (Max) @ Vgs
300W (Tc) Power Dissipation (Max)
Through Hole Mounting Type