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APT56M50L

Microsemi APT56M50L

N 通道500 V56A(Tc)5V @ 2.5mA780W(Tc)-55°C ~ 150°C(TJ)通孔

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APT56M50L
MOSFET N-CH 500V 56A TO264
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¥19.00

价格更新:一个月前

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产品详情

Overview

The APT56F60L is MOSFET Power FREDFET - MOS8, that includes 0.352740 oz Unit Weight, they are designed to operate with a Through Hole Mounting Style, Package Case is shown on datasheet note for use in a TO-264, that offers Technology features such as Si, Configuration is designed to work in Single, as well as the 1.04 kW Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, the device is offered in 60 ns Fall Time, the device has a 75 ns of Rise Time, and Vgs Gate Source Voltage is +/- 30 V, and the Id Continuous Drain Current is 60 A, and Vds Drain Source Breakdown Voltage is 600 V, and the Vgs th Gate Source Threshold Voltage is 4 V, and Rds On Drain Source Resistance is 110 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 190 ns, and the Typical Turn On Delay Time is 65 ns, and Qg Gate Charge is 280 nC, and the Forward Transconductance Min is 55 S, and Channel Mode is Enhancement.

The APT56F60B2 is MOSFET Power FREDFET - MOS8, that includes Si Technology.

Features

Tube Package
a continuous drain current (ID) of 56A
the turn-off delay time is 100 ns

Through Hole Mounting Type

Applications


There are a lot of Microsemi Corporation
APT56M50L applications of single MOSFETs transistors.

  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
产品属性
全选
包装: 管件
部件状态: 在售
FET 类型: N 通道
技术: MOSFET(金属氧化物)
漏源电压(Vdss): 500 V
25°C 时电流 - 连续漏极 (Id): 56A(Tc)
最大驱动电压(Rds 开启),最小驱动电压(Rds 开启): 10V
漏极电流和栅极至源极电压下的最大导通电阻: 100 毫欧 @ 28A,10V
漏极电流下的最大栅极阈值电压: 5V @ 2.5mA
最大栅极电荷 (Qg) @ Vgs: 220 nC @ 10 V
最大栅极源电压: ±30V
Vds 时的最大输入电容 (Ciss): 8800 pF @ 25 V
最大功率耗散: 780W(Tc)
工作温度: -55°C ~ 150°C(TJ)
安装类型: 通孔
供应商器件封装: TO-264
封装/外壳: TO-264-3,TO-264AA
Microsemi Corporation

Microsemi Corporation

Microsemi Corporation是一家提供高性能半导体和系统解决方案的公司,专注于通信、国防与安全、航空和工业市场。公司成立于1959年,总部位于美国加利福尼亚州阿利索维耶荷。Microsemi于2018年被Microchip Technology收购。

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