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APT30GN60BG

Microsemi APT30GN60BG

600 V63 A525µJ(开),700µJ(关)-55°C ~ 175°C(TJ)TO-247-3

比较
APT30GN60BG
IGBT 600V 63A 203W TO247
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¥20.78

价格更新:一个月前

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产品详情

Overview

The APT30GF60JU3 is IGBT 600V 58A 192W SOT227, that includes IGBT Silicon Modules Product, they are designed to operate with a 1.058219 oz Unit Weight, Mounting Style is shown on datasheet note for use in a Screw, that offers Tradename features such as ISOTOP, Package Case is designed to work in SOT-227-4, miniBLOC, as well as the Chassis Mount Mounting Type, the device can also be used as ISOTOPR Supplier Device Package. In addition, the Input is Standard, the device is offered in Single Configuration, the device has a 192W of Power Max, and Current Collector Ic Max is 58A, and the Voltage Collector Emitter Breakdown Max is 600V, and Current Collector Cutoff Max is 40μA, and the IGBT Type is NPT, and Vce on Max Vge Ic is 2.5V @ 15V, 30A, and the Input Capacitance Cies Vce is 1.85nF @ 25V, and NTC Thermistor is No, and the Pd Power Dissipation is 192 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Collector Emitter Voltage VCEO Max is 600 V, and the Collector Emitter Saturation Voltage is 2.1 V, and Continuous Collector Current at 25 C is 58 A, and the Gate Emitter Leakage Current is 100 nA, and Maximum Gate Emitter Voltage is +/- 20 V.

The APT30GN60BDQ2G is IGBT 600V 63A 203W TO247, that includes 63A Current Collector Ic Max, they are designed to operate with a 90A Current Collector Pulsed Icm, Gate Charge is shown on datasheet note for use in a 165nC, that offers IGBT Type features such as Trench Field Stop, Input Type is designed to work in Standard, as well as the Through Hole Mounting Type, the device can also be used as TO-247-3 Package Case. In addition, the Packaging is Tube, the device is offered in 203W Power Max, the device has a TO-247 [B] of Supplier Device Package, and Switching Energy is 525μJ (on), 700μJ (off), and the Td on off 25°C is 12ns/155ns, and Test Condition is 400V, 30A, 4.3 Ohm, 15V, and the Vce on Max Vge Ic is 1.9V @ 15V, 30A, and Voltage Collector Emitter Breakdown Max is 600V.

Features

Tube Package
Trench Field Stop IGBT Type
600 V Voltage - Collector Emitter Breakdown (Max)
63 A Current - Collector (Ic) (Max)
90 A Current - Collector Pulsed (Icm)
1.9V @ 15V, 30A Vce(on) (Max) @ Vge, Ic
203 W Power - Max
525µJ (on), 700µJ (off) Switching Energy
Standard Input Type
165 nC Gate Charge
12ns/155ns Td (on/off) @ 25°C
400V, 30A, 4.3Ohm, 15V Test Condition
Through Hole Mounting Type
产品属性
全选
包装: 管件
部件状态: 在售
IGBT 类型: 沟槽型场截止
最大集电极-发射极击穿电压: 600 V
集电极电流 (Ic)(最大值): 63 A
电流 - 集电极脉冲 (Icm): 90 A
栅极-发射极电压和集电极电流时的最大集电极-发射极导通电压: 1.9V @ 15V,30A
最大功率: 203 W
开关能量: 525µJ(开),700µJ(关)
输入类型: 标准
栅极电荷: 165 nC
25°C 时的开/关延迟时间: 12ns/155ns
测试条件: 400V,30A,4.3 欧姆,15V
工作温度: -55°C ~ 175°C(TJ)
安装类型: 通孔
封装/外壳: TO-247-3
供应商器件封装: TO-247 [B]
Microsemi Corporation

Microsemi Corporation

Microsemi Corporation是一家提供高性能半导体和系统解决方案的公司,专注于通信、国防与安全、航空和工业市场。公司成立于1959年,总部位于美国加利福尼亚州阿利索维耶荷。Microsemi于2018年被Microchip Technology收购。

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