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APT100MC120JCU2

Microsemi APT100MC120JCU2

N 通道1200 V143A(Tc)2.3V @ 2mA600W(Tc)-40°C ~ 150°C(TJ)底座安装

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APT100MC120JCU2
SICFET N-CH 1200V 143A SOT227
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产品详情

Overview

The APT100M50J is Discrete Semiconductor Modules Power MOSFET - MOS8, that includes Power MOSFET Modules Product, they are designed to operate with a 1.058219 oz Unit Weight, Mounting Style is shown on datasheet note for use in a Screw, that offers Tradename features such as POWER MOS 8 ISOTOP, Package Case is designed to work in SOT-227-4, as well as the Single Configuration, the device can also be used as 960 W Pd Power Dissipation. In addition, the Fall Time is 90 ns, the device is offered in 125 ns Rise Time, the device has a 30 V of Vgs Gate Source Voltage, and Id Continuous Drain Current is 103 A, and the Vds Drain Source Breakdown Voltage is 500 V, and Vgs th Gate Source Threshold Voltage is 3 V, and the Rds On Drain Source Resistance is 28 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 280 ns, and Typical Turn On Delay Time is 105 ns.

The APT100GT60JRDQ4 is IGBT 600V 148A 500W SOT227, that includes Single Configuration, they are designed to operate with a 50μA Current Collector Cutoff Max, Current Collector Ic Max is shown on datasheet note for use in a 148A, that offers IGBT Type features such as NPT, Input is designed to work in Standard, as well as the 5.15nF @ 25V Input Capacitance Cies Vce, the device can also be used as Chassis Mount Mounting Type. In addition, the NTC Thermistor is No, the device is offered in ISOTOP Package Case, the device has a 500W of Power Max, and Series is Thunderbolt IGBTR, and the Supplier Device Package is ISOTOPR, and Vce on Max Vge Ic is 2.5V @ 15V, 100A, and the Voltage Collector Emitter Breakdown Max is 600V.

Features

Bulk Package
a continuous drain current (ID) of 143A
a 1200V drain to source voltage (Vdss)

Chassis Mount Mounting Type

Applications


There are a lot of Microsemi Corporation
APT100MC120JCU2 applications of single MOSFETs transistors.

  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
产品属性
全选
包装: 散装
部件状态: 在售
FET 类型: N 通道
技术: SiCFET(碳化硅)
漏源电压(Vdss): 1200 V
25°C 时电流 - 连续漏极 (Id): 143A(Tc)
最大驱动电压(Rds 开启),最小驱动电压(Rds 开启): 20V
漏极电流和栅极至源极电压下的最大导通电阻: 17 毫欧 @ 100A,20V
漏极电流下的最大栅极阈值电压: 2.3V @ 2mA
最大栅极电荷 (Qg) @ Vgs: 360 nC @ 20 V
最大栅极源电压: +25V,-10V
Vds 时的最大输入电容 (Ciss): 5960 pF @ 1000 V
最大功率耗散: 600W(Tc)
工作温度: -40°C ~ 150°C(TJ)
安装类型: 底座安装
供应商器件封装: SOT-227
封装/外壳: SOT-227-4,miniBLOC
Microsemi Corporation

Microsemi Corporation

Microsemi Corporation是一家提供高性能半导体和系统解决方案的公司,专注于通信、国防与安全、航空和工业市场。公司成立于1959年,总部位于美国加利福尼亚州阿利索维耶荷。Microsemi于2018年被Microchip Technology收购。

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