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APT100GT60JR

Microsemi APT100GT60JR

NPT600 V148 A500 W-55°C ~ 150°C(TJ)

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APT100GT60JR
IGBT MOD 600V 148A 500W ISOTOP
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¥68.90

价格更新:一个月前

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产品详情

Overview

The APT100GT120JU2 is IGBT 1200V 140A 480W SOT227, that includes IGBT Silicon Modules Product, they are designed to operate with a 1.058219 oz Unit Weight, Mounting Style is shown on datasheet note for use in a Screw, that offers Tradename features such as ISOTOP, Package Case is designed to work in ISOTOP, as well as the Chassis Mount Mounting Type, the device can also be used as SOT-227 Supplier Device Package. In addition, the Input is Standard, the device is offered in Single Configuration, the device has a 480W of Power Max, and Current Collector Ic Max is 140A, and the Voltage Collector Emitter Breakdown Max is 1200V, and Current Collector Cutoff Max is 5mA, and the IGBT Type is Trench Field Stop, and Vce on Max Vge Ic is 2.1V @ 15V, 100A, and the Input Capacitance Cies Vce is 7.2nF @ 25V, and NTC Thermistor is No, and the Pd Power Dissipation is 480 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Collector Emitter Voltage VCEO Max is 1.2 kV, and the Collector Emitter Saturation Voltage is 1.7 V, and Continuous Collector Current at 25 C is 140 A, and the Gate Emitter Leakage Current is 400 nA, and Maximum Gate Emitter Voltage is +/- 20 V.

The APT100GT120JU3 is IGBT 1200V 140A 480W SOT227, that includes Single Configuration, they are designed to operate with a 5mA Current Collector Cutoff Max, Current Collector Ic Max is shown on datasheet note for use in a 140A, that offers IGBT Type features such as Trench Field Stop, Input is designed to work in Standard, as well as the 7.2nF @ 25V Input Capacitance Cies Vce, the device can also be used as Chassis Mount Mounting Type. In addition, the NTC Thermistor is No, the device is offered in ISOTOP Package Case, the device has a 480W of Power Max, and Supplier Device Package is SOT-227, and the Vce on Max Vge Ic is 2.1V @ 15V, 100A, and Voltage Collector Emitter Breakdown Max is 1200V.

Features

Thunderbolt IGBT® Series
Tube Package
NPT IGBT Type
Single Configuration
600 V Voltage - Collector Emitter Breakdown (Max)
148 A Current - Collector (Ic) (Max)
500 W Power - Max
2.5V @ 15V, 100A Vce(on) (Max) @ Vge, Ic
25 µA Current - Collector Cutoff (Max)
5.15 nF @ 25 V Input Capacitance (Cies) @ Vce
Standard Input
No NTC Thermistor
Chassis Mount Mounting Type
ISOTOP Package / Case
ISOTOP® Supplier Device Package
产品属性
全选
型号系列: Thunderbolt IGBT®
包装: 管件
部件状态: 在售
IGBT 类型: NPT
配置: 单路
最大集电极-发射极击穿电压: 600 V
集电极电流 (Ic)(最大值): 148 A
最大功率: 500 W
栅极-发射极电压和集电极电流时的最大集电极-发射极导通电压: 2.5V @ 15V,100A
电流 - 集电极截止(最大值): 25 µA
Vce 时的输入电容 (Cies): 5.15 nF @ 25 V
输入: 标准
NTC 热敏电阻: 无
工作温度: -55°C ~ 150°C(TJ)
安装类型: 底座安装
封装/外壳: ISOTOP
供应商器件封装: ISOTOP®
Microsemi Corporation

Microsemi Corporation

Microsemi Corporation是一家提供高性能半导体和系统解决方案的公司,专注于通信、国防与安全、航空和工业市场。公司成立于1959年,总部位于美国加利福尼亚州阿利索维耶荷。Microsemi于2018年被Microchip Technology收购。

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