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2N6671

Microsemi 2N6671

PNP8 A300 V

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2N6671
TRANS PNP 300V 8A TO3
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¥6.44

价格更新:一个月前

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产品详情

Overview

The 2N6667G is TRANS PNP DARL 60V 10A TO220AB, that includes 2N6667 Series, they are designed to operate with a Tube Packaging, Unit Weight is shown on datasheet note for use in a 0.211644 oz, that offers Mounting Style features such as Through Hole, Package Case is designed to work in TO-220-3, as well as the Through Hole Mounting Type, the device can also be used as TO-220AB Supplier Device Package. In addition, the Configuration is Single, the device is offered in 2W Power Max, the device has a PNP - Darlington of Transistor Type, and Current Collector Ic Max is 10A, and the Voltage Collector Emitter Breakdown Max is 60V, and DC Current Gain hFE Min Ic Vce is 1000 @ 5A, 3V, and the Vce Saturation Max Ib Ic is 3V @ 100mA, 10A, and Current Collector Cutoff Max is 1mA, and the Pd Power Dissipation is 65 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 65 C, and Collector Emitter Voltage VCEO Max is 60 V, and the Transistor Polarity is PNP, and Collector Base Voltage VCBO is 60 V, and the Emitter Base Voltage VEBO is 5 V, and Maximum DC Collector Current is 10 A, and the Continuous Collector Current is 10 A, and DC Collector Base Gain hfe Min is 1000, and the Maximum Collector Cut off Current is 1000 uA.

The 2N6667 is TRANS PNP DARL 60V 10A TO220AB, that includes 60 V Collector Base Voltage VCBO, they are designed to operate with a 2 V Collector Emitter Saturation Voltage, Collector Emitter Voltage VCEO Max is shown on datasheet note for use in a 60 V, that offers Continuous Collector Current features such as 0.45 A, DC Collector Base Gain hfe Min is designed to work in 100, as well as the 20 MHz Gain Bandwidth Product fT, the device can also be used as 10 A Maximum DC Collector Current. In addition, the Mounting Style is Through Hole, the device is offered in TO-220 Package Case, the device has a 65 W of Pd Power Dissipation, and Series is 2N6667, and the Transistor Polarity is PNP, and Unit Weight is 0.081130 oz.

Features

Bulk Package
PNP Transistor Type
8 A Current - Collector (Ic) (Max)
300 V Voltage - Collector Emitter Breakdown (Max)
10 @ 8A, 300V DC Current Gain (hFE) (Min) @ Ic, Vce
150 W Power - Max
Through Hole Mounting Type
产品属性
全选
包装: 散装
部件状态: 停产
晶体管类型: PNP
集电极电流 (Ic)(最大值): 8 A
最大集电极-发射极击穿电压: 300 V
直流电流增益 (hFE) 最小值 @ Ic、Vce: 10 @ 8A,300V
最大功率: 150 W
安装类型: 通孔
封装/外壳: TO-204AA,TO-3
供应商器件封装: TO-3
Microsemi Corporation

Microsemi Corporation

Microsemi Corporation是一家提供高性能半导体和系统解决方案的公司,专注于通信、国防与安全、航空和工业市场。公司成立于1959年,总部位于美国加利福尼亚州阿利索维耶荷。Microsemi于2018年被Microchip Technology收购。

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